LBC846ADW1T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LBC846ADW1T1G

Código: 1A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.38 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 65 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 110

Encapsulados: SOT-363

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LBC846ADW1T1G datasheet

 ..1. Size:209K  lrc
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LBC846ADW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848

 ..2. Size:224K  lrc
lbc846adw1t1g.pdf pdf_icon

LBC846ADW1T1G

LESHAN RADIO COMPANY, LTD. LBC846ADW1T1G LBC846BDW1T1G Dual General Purpose Transistors LBC847BDW1T1G LBC847CDW1T1G NPN Duals LBC848BDW1T1G LBC848CDW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is S-LBC846ADW1T1G designed for low power surface mount applications. S-LBC846BDW1T1G S-LBC847BDW1T1G We d

 ..3. Size:209K  lrc
lbc846bdw1t1g lbc847bdw1t1g lbc847cdw1t1g lbc848bdw1t1g lbc848cdw1t1g lbc846adw1t1g.pdf pdf_icon

LBC846ADW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848

 7.1. Size:401K  lrc
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LBC846ADW1T1G

LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon CWT1G We declare that the material of product compliance with RoHS requirements. LBC848AWT1G,BWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( ) ORDERING INFORMATIO

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