LBC846ADW1T1G. Аналоги и основные параметры
Наименование производителя: LBC846ADW1T1G
Маркировка: 1A
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.38 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 65 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 4.5 pf
Статический коэффициент передачи тока (hFE): 110
Корпус транзистора: SOT-363
Аналоги (замена) для LBC846ADW1T1G
- подборⓘ биполярного транзистора по параметрам
LBC846ADW1T1G даташит
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848
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LESHAN RADIO COMPANY, LTD. LBC846ADW1T1G LBC846BDW1T1G Dual General Purpose Transistors LBC847BDW1T1G LBC847CDW1T1G NPN Duals LBC848BDW1T1G LBC848CDW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is S-LBC846ADW1T1G designed for low power surface mount applications. S-LBC846BDW1T1G S-LBC847BDW1T1G We d
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848
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LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon CWT1G We declare that the material of product compliance with RoHS requirements. LBC848AWT1G,BWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( ) ORDERING INFORMATIO
Другие транзисторы: LBC807-16DMT1G, LBC807-25DMT1G, LBC807-40DMT1G, LBC817-16DMT1G, LBC817-16DPMT1G, LBC817-25DMT1G, LBC817-40DMT1G, LBC817-40DPMT1G, 2SA1015, LBC847CPDW1T1G, LBC848AWT1G, LBC858CWT1G, LBCW65ALT1G, M54522WP, M54530FP, M54530P, M54531FP
History: CK65
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Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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