M54532FP Todos los transistores

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M54532FP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: M54532FP

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 800

Empaquetado / Estuche: 16P2N-A

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M54532FP Datasheet (PDF)

1.1. m54532fp.pdf Size:59K _upd

M54532FP
M54532FP

MITSUBISHI SEMICONDUCTOR M54532P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION PIN CONFIGURATION M54532P and M54532FP are four-circuit Darlington transis- tor arrays with clamping diodes. The circuits are made of COMMON COM 1 16 NC NPN transistors. Both the semiconductor integrated circuits OUTPUT1 O1← 2 15 →O4 OUTPUT4 perform high-curr

4.1. m54532p.pdf Size:59K _upd

M54532FP
M54532FP

MITSUBISHI SEMICONDUCTOR M54532P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION PIN CONFIGURATION M54532P and M54532FP are four-circuit Darlington transis- tor arrays with clamping diodes. The circuits are made of COMMON COM 1 16 NC NPN transistors. Both the semiconductor integrated circuits OUTPUT1 O1← 2 15 →O4 OUTPUT4 perform high-curr

 5.1. m54530p.pdf Size:53K _upd

M54532FP
M54532FP

MITSUBISHI SEMICONDUCTOR M54530P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION PIN CONFIGURATION M54530P and M54530FP are seven-circuit Darlington tran- sistor arrays with clamping diodes. The circuits are made of   IN1→ 1 16 →O1   NPN transistors. Both the semiconductor integrated circuits   IN2→ 2 15 →O2 

5.2. m54530fp.pdf Size:53K _upd

M54532FP
M54532FP

MITSUBISHI SEMICONDUCTOR M54530P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION PIN CONFIGURATION M54530P and M54530FP are seven-circuit Darlington tran- sistor arrays with clamping diodes. The circuits are made of   IN1→ 1 16 →O1   NPN transistors. Both the semiconductor integrated circuits   IN2→ 2 15 →O2 

 5.3. m54531wp.pdf Size:58K _upd

M54532FP
M54532FP

MITSUBISHI SEMICONDUCTOR M54531WP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION PIN CONFIGURATION M54531WP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current IN1→ 1 16 →O1 driving with extremely low input-curr

5.4. m54531fp.pdf Size:51K _upd

M54532FP
M54532FP

MITSUBISHI SEMICONDUCTOR M54531P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION PIN CONFIGURATION M54531P and M54531FP are seven-circuit Darlington tran- sistor arrays with clamping diodes. The circuits are made of   IN1→ 1 16 →O1 NPN transistors. Both the semiconductor integrated circuits     IN2→ 2 15 →O2 perfo

 5.5. m54531p.pdf Size:51K _upd

M54532FP
M54532FP

MITSUBISHI SEMICONDUCTOR M54531P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION PIN CONFIGURATION M54531P and M54531FP are seven-circuit Darlington tran- sistor arrays with clamping diodes. The circuits are made of   IN1→ 1 16 →O1 NPN transistors. Both the semiconductor integrated circuits     IN2→ 2 15 →O2 perfo

Otros transistores... LBC858CWT1G , LBCW65ALT1G , M54522WP , M54530FP , M54530P , M54531FP , M54531P , M54531WP , 2N3563 , M54532P , M54561P , M54566DP , M54566WP , M54567FP , M54567P , M54580FP , M54580P .

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