All Transistors. M54532FP Datasheet

 

M54532FP Datasheet, Equivalent, Cross Reference Search

Type Designator: M54532FP

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 75 °C

Forward Current Transfer Ratio (hFE), MIN: 800

Noise Figure, dB: -

Package: 16P2N-A

M54532FP Transistor Equivalent Substitute - Cross-Reference Search

 

M54532FP Datasheet (PDF)

1.1. m54532fp.pdf Size:59K _upd

M54532FP
M54532FP

MITSUBISHI SEMICONDUCTOR M54532P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION PIN CONFIGURATION M54532P and M54532FP are four-circuit Darlington transis- tor arrays with clamping diodes. The circuits are made of COMMON COM 1 16 NC NPN transistors. Both the semiconductor integrated circuits OUTPUT1 O1← 2 15 →O4 OUTPUT4 perform high-curr

4.1. m54532p.pdf Size:59K _upd

M54532FP
M54532FP

MITSUBISHI SEMICONDUCTOR M54532P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION PIN CONFIGURATION M54532P and M54532FP are four-circuit Darlington transis- tor arrays with clamping diodes. The circuits are made of COMMON COM 1 16 NC NPN transistors. Both the semiconductor integrated circuits OUTPUT1 O1← 2 15 →O4 OUTPUT4 perform high-curr

 5.1. m54530p.pdf Size:53K _upd

M54532FP
M54532FP

MITSUBISHI SEMICONDUCTOR M54530P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION PIN CONFIGURATION M54530P and M54530FP are seven-circuit Darlington tran- sistor arrays with clamping diodes. The circuits are made of   IN1→ 1 16 →O1   NPN transistors. Both the semiconductor integrated circuits   IN2→ 2 15 →O2 

5.2. m54530fp.pdf Size:53K _upd

M54532FP
M54532FP

MITSUBISHI SEMICONDUCTOR M54530P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION PIN CONFIGURATION M54530P and M54530FP are seven-circuit Darlington tran- sistor arrays with clamping diodes. The circuits are made of   IN1→ 1 16 →O1   NPN transistors. Both the semiconductor integrated circuits   IN2→ 2 15 →O2 

 5.3. m54531wp.pdf Size:58K _upd

M54532FP
M54532FP

MITSUBISHI SEMICONDUCTOR M54531WP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION PIN CONFIGURATION M54531WP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current IN1→ 1 16 →O1 driving with extremely low input-curr

5.4. m54531fp.pdf Size:51K _upd

M54532FP
M54532FP

MITSUBISHI SEMICONDUCTOR M54531P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION PIN CONFIGURATION M54531P and M54531FP are seven-circuit Darlington tran- sistor arrays with clamping diodes. The circuits are made of   IN1→ 1 16 →O1 NPN transistors. Both the semiconductor integrated circuits     IN2→ 2 15 →O2 perfo

 5.5. m54531p.pdf Size:51K _upd

M54532FP
M54532FP

MITSUBISHI SEMICONDUCTOR M54531P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION PIN CONFIGURATION M54531P and M54531FP are seven-circuit Darlington tran- sistor arrays with clamping diodes. The circuits are made of   IN1→ 1 16 →O1 NPN transistors. Both the semiconductor integrated circuits     IN2→ 2 15 →O2 perfo

Datasheet: LBC858CWT1G , LBCW65ALT1G , M54522WP , M54530FP , M54530P , M54531FP , M54531P , M54531WP , 2N3563 , M54532P , M54561P , M54566DP , M54566WP , M54567FP , M54567P , M54580FP , M54580P .

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