M54561P . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Búsqueda de reemplazo de transistor bipolar M54561P

M54561P Datasheet (PDF)

1.1. m54561p.pdf Size:59K _upd

MITSUBISHI SEMICONDUCTOR M54561P 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION PIN CONFIGURATION (TOP VIEW) M54561P is seven-circuit output-sourcing Darlington transis- tor arrays. The circuits are made of PNP and NPN transis- tors. Both the semiconductor integrated circuits perform IN1→ 1 16 → O1 high-current driving with extr

5.1. m54562wp.pdf Size:204K _upd

MITSUBISHI SEMICONDUCTORS M54562WP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION PIN CONFIGURATION M54562WP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit IN1→ 1 18 →O1 performs high current driving with extremely low inp

5.2. m54562fp.pdf Size:270K _upd

 M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN ○ NC NC 1 20 transistors. This semiconductor integrated circuit performs high IN1→ 2 19 →O1 current driving with extremely low input-curr

 5.3. m54567fp m54567p.pdf Size:81K _upd

MITSUBISHI SEMICONDUCTOR M54567P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION PIN CONFIGURATION M54567P and M54567FP are four-circuit Darlington transis- tor arrays with clamping diodes. The circuits are made of VCC 1 16 COM COMMON PNP and NPN transistors. Both the semiconductor inte- OUTPUT1 O1← 2 15 →O4 OUTPUT4 grated circuits perfor

5.4. m54566dp.pdf Size:157K _upd

MITSUBISHI SEMICONDUCTORS M54566DP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION PIN CONFIGURATION M54566DP is seven-circuit collector current sink type darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated IN1→ 1 16 →O1 circuits perform high-current driving with extremely low IN2→ 2 15 →

 5.5. m54566wp.pdf Size:74K _upd

MITSUBISHI SEMICONDUCTOR M54566WP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION PIN CONFIGURATION M54566WP are seven-circuit collector-current synchro- nized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor IN1→ 1 16 →O1 integrated circuits perform high-current driving with extre- mely low input

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: US6H23 | UMH9NFHA | UMH8NFHA | UMH6NFHA | UMH5NFHA | UMH4NFHA | UMH3NFHA | UMH33N | UMH32N | UMH2NFHA | UMH1NFHA | UMH14NFHA | UMH14N | UMH11NFHA | UMH10NFHA | UMD9NFHA | UMD6NFHA | UMD5N | UMD4N | UMD3NFHA |