All Transistors. M54561P Datasheet

 

M54561P Datasheet, Equivalent, Cross Reference Search

Type Designator: M54561P

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1.47 W

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 40 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 75 °C

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: 16P4

M54561P Transistor Equivalent Substitute - Cross-Reference Search

 

M54561P Datasheet (PDF)

1.1. m54561p.pdf Size:59K _upd

M54561P
M54561P

MITSUBISHI SEMICONDUCTOR M54561P 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION PIN CONFIGURATION (TOP VIEW) M54561P is seven-circuit output-sourcing Darlington transis- tor arrays. The circuits are made of PNP and NPN transis- tors. Both the semiconductor integrated circuits perform IN1→ 1 16 → O1 high-current driving with extr

5.1. m54562wp.pdf Size:204K _upd

M54561P
M54561P

MITSUBISHI SEMICONDUCTORS M54562WP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION PIN CONFIGURATION M54562WP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit IN1→ 1 18 →O1 performs high current driving with extremely low inp

5.2. m54562fp.pdf Size:270K _upd

M54561P
M54561P

 M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN ○ NC NC 1 20 transistors. This semiconductor integrated circuit performs high IN1→ 2 19 →O1 current driving with extremely low input-curr

 5.3. m54567fp m54567p.pdf Size:81K _upd

M54561P
M54561P

MITSUBISHI SEMICONDUCTOR M54567P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION PIN CONFIGURATION M54567P and M54567FP are four-circuit Darlington transis- tor arrays with clamping diodes. The circuits are made of VCC 1 16 COM COMMON PNP and NPN transistors. Both the semiconductor inte- OUTPUT1 O1← 2 15 →O4 OUTPUT4 grated circuits perfor

5.4. m54566dp.pdf Size:157K _upd

M54561P
M54561P

MITSUBISHI SEMICONDUCTORS M54566DP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION PIN CONFIGURATION M54566DP is seven-circuit collector current sink type darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated IN1→ 1 16 →O1 circuits perform high-current driving with extremely low IN2→ 2 15 →

 5.5. m54566wp.pdf Size:74K _upd

M54561P
M54561P

MITSUBISHI SEMICONDUCTOR M54566WP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION PIN CONFIGURATION M54566WP are seven-circuit collector-current synchro- nized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor IN1→ 1 16 →O1 integrated circuits perform high-current driving with extre- mely low input

Datasheet: M54522WP , M54530FP , M54530P , M54531FP , M54531P , M54531WP , M54532FP , M54532P , 2N2905 , M54566DP , M54566WP , M54567FP , M54567P , M54580FP , M54580P , M54583FP , M54583WP .

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