MBTA06LT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MBTA06LT1
Código: 1G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de transistor bipolar MBTA06LT1
MBTA06LT1 Datasheet (PDF)
mbta06lt1.pdf
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RoHS MBTA06LT1 NPN EPITAXIAL SILICON TRANSISTOR * High Collector-Emitter Voltage:Vcbo=80V * Collector Current: Ic=500mA * Collector Dissipation: Pc=225mW(Ta=25 ) 1.1.BASEABSOLUTE MAXIMUM RATINGS at Ta=25 2.41.32.EMITTER3.COLLECTOR Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo 80 V Collector-Emitter Voltage Vceo 80 V Unit:mmEmitter-Base Voltage Ve
mmbta05lt1 mmbta06lt1.pdf
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MMBTA05LT1G,MMBTA06LT1GDriver TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 31MAXIMUM RATINGSBASERating Symbol Value Unit2Collector-Emitter Voltage VCEO VdcEMITTERMMBTA05LT1 60MMBTA06LT1 803Collector-Base Voltage VCBO VdcMMBTA05LT1 601MMBTA06LT1 802Emitter-Base Vo
mmbta06lt1g.pdf
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MMBTA05L, MMBTA06L,SMMBTA06LDriver TransistorsNPN Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2EMITTERMAXIMUM RATINGSRating Symbol Value Unit3
lmbta06lt1g.pdf
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LESHAN RADIO COMPANY, LTD.Driver TransistorsFEATURESLMBTA05LT1G We declare that the material of productcompliance with RoHS requirements.LMBTA06LT1G S- Prefix for Automotive and Other Applications Requiring S-LMBTA05LT1GUnique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBTA06LT1GMAXIMUM RATINGSValue3Rating Symbol LMBTA05 LMBT
lmbta05lt1g lmbta06lt1g.pdf
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LESHAN RADIO COMPANY, LTD.Driver TransistorsFEATURESLMBTA05LT1G We declare that the material of productcompliance with RoHS requirements.LMBTA06LT1G S- Prefix for Automotive and Other Applications Requiring S-LMBTA05LT1GUnique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBTA06LT1GMAXIMUM RATINGSValue3Rating Symbol LMBTA05 LMBT
mmbta06lt1g.pdf
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SEMICONDUCTORMMBTA05/06TECHNICAL DATADriver TransistorsFEATURESWe declare that the material of product3compliance with RoHS requirements.2MAXIMUM RATINGS1ValueRating Symbol MMBTA05 MMBTA06 UnitSOT23CollectorEmitter Voltage V 60 80 VdcCEOCollectorBase Voltage V 60 80 VdcCBOEmitterBase Voltage V 4.0 VdcEBOCollector Current Continuous I
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: TMPT2484
History: TMPT2484
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Liste
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