MBTA06LT1
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MBTA06LT1
Código: 1G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 4
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta:
SOT-23
Búsqueda de reemplazo de transistor bipolar MBTA06LT1
MBTA06LT1
Datasheet (PDF)
..1. Size:55K wej
mbta06lt1.pdf
RoHS MBTA06LT1 NPN EPITAXIAL SILICON TRANSISTOR * High Collector-Emitter Voltage:Vcbo=80V * Collector Current: Ic=500mA * Collector Dissipation: Pc=225mW(Ta=25 ) 1.1.BASEABSOLUTE MAXIMUM RATINGS at Ta=25 2.41.32.EMITTER3.COLLECTOR Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo 80 V Collector-Emitter Voltage Vceo 80 V Unit:mmEmitter-Base Voltage Ve
0.1. Size:103K onsemi
mmbta05lt1 mmbta06lt1.pdf
MMBTA05LT1G,MMBTA06LT1GDriver TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 31MAXIMUM RATINGSBASERating Symbol Value Unit2Collector-Emitter Voltage VCEO VdcEMITTERMMBTA05LT1 60MMBTA06LT1 803Collector-Base Voltage VCBO VdcMMBTA05LT1 601MMBTA06LT1 802Emitter-Base Vo
0.2. Size:114K onsemi
mmbta06lt1g.pdf
MMBTA05L, MMBTA06L,SMMBTA06LDriver TransistorsNPN Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2EMITTERMAXIMUM RATINGSRating Symbol Value Unit3
0.3. Size:112K lrc
lmbta06lt1g.pdf
LESHAN RADIO COMPANY, LTD.Driver TransistorsFEATURESLMBTA05LT1G We declare that the material of productcompliance with RoHS requirements.LMBTA06LT1G S- Prefix for Automotive and Other Applications Requiring S-LMBTA05LT1GUnique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBTA06LT1GMAXIMUM RATINGSValue3Rating Symbol LMBTA05 LMBT
0.4. Size:112K lrc
lmbta05lt1g lmbta06lt1g.pdf
LESHAN RADIO COMPANY, LTD.Driver TransistorsFEATURESLMBTA05LT1G We declare that the material of productcompliance with RoHS requirements.LMBTA06LT1G S- Prefix for Automotive and Other Applications Requiring S-LMBTA05LT1GUnique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBTA06LT1GMAXIMUM RATINGSValue3Rating Symbol LMBTA05 LMBT
0.5. Size:106K first silicon
mmbta06lt1g.pdf
SEMICONDUCTORMMBTA05/06TECHNICAL DATADriver TransistorsFEATURESWe declare that the material of product3compliance with RoHS requirements.2MAXIMUM RATINGS1ValueRating Symbol MMBTA05 MMBTA06 UnitSOT23CollectorEmitter Voltage V 60 80 VdcCEOCollectorBase Voltage V 60 80 VdcCBOEmitterBase Voltage V 4.0 VdcEBOCollector Current Continuous I
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