PBSS4021NZ
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS4021NZ
Código: PB4021NZ
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2.6
W
Tensión colector-base (Vcb): 20
V
Tensión colector-emisor (Vce): 20
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 8
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 95
MHz
Capacitancia de salida (Cc): 110
pF
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta:
SOT-223
Búsqueda de reemplazo de transistor bipolar PBSS4021NZ
PBSS4021NZ
Datasheet (PDF)
..1. Size:190K philips
pbss4021nz.pdf 
PBSS4021NZ20 V, 8 A NPN low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4021PZ.1.2 Features and benefits Very low collector-emitter saturation voltage VCE
..2. Size:190K nxp
pbss4021nz.pdf
PBSS4021NZ20 V, 8 A NPN low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4021PZ.1.2 Features and benefits Very low collector-emitter saturation voltage VCE
5.1. Size:196K philips
pbss4021nx.pdf
PBSS4021NX20 V, 7 A NPN low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4021PX.1.2 Features and benefits Very low collector-emitter saturation
5.2. Size:176K philips
pbss4021nt.pdf
PBSS4021NT20 V, 4.3 A NPN low VCEsat (BISS) transistorRev. 01 31 January 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4021PT.1.2 Features Very low collector-emitter saturation voltage VCEsat High col
5.3. Size:249K nxp
pbss4021nx.pdf
PBSS4021NX20 V, 7 A NPN low VCEsat (BISS) transistor9 October 2012 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium powerand flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNPcomplement: PBSS4021PX.1.2 Features and benefits Very low collector-emitter saturation voltage
5.4. Size:293K nxp
pbss4021nt.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
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