PBSS4032SPN
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS4032SPN
Código: 4032SPN
Material: Si
Polaridad de transistor: NPN*PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.7
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 30
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 4.8
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140
MHz
Capacitancia de salida (Cc): 65
pF
Ganancia de corriente contínua (hfe): 150
Paquete / Cubierta:
SO-8
Búsqueda de reemplazo de transistor bipolar PBSS4032SPN
PBSS4032SPN
Datasheet (PDF)
..1. Size:493K philips
pbss4032spn.pdf 
PBSS4032SPN30 V NPN/PNP low VCEsat (BISS) transistorRev. 2 14 October 2010 Product data sheet1. Product profile1.1 General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN PNP/PNP complement complementNXP NamePBSS
..2. Size:494K nxp
pbss4032spn.pdf
PBSS4032SPN30 V NPN/PNP low VCEsat (BISS) transistorRev. 2 14 October 2010 Product data sheet1. Product profile1.1 General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN PNP/PNP complement complementNXP NamePBSS
4.1. Size:164K philips
pbss4032sp.pdf
PBSS4032SP30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistorRev. 2 13 October 2010 Product data sheet1. Product profile1.1 General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN NPN/PNP complement complementNXP Name
4.2. Size:165K nxp
pbss4032sp.pdf
PBSS4032SP30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistorRev. 2 13 October 2010 Product data sheet1. Product profile1.1 General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN NPN/PNP complement complementNXP Name
5.1. Size:368K philips
pbss4032sn.pdf
PBSS4032SN30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistorRev. 2 13 October 2010 Product data sheet1. Product profile1.1 General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP/PNP NPN/PNP complement complementNXP Name
5.2. Size:368K nxp
pbss4032sn.pdf
PBSS4032SN30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistorRev. 2 13 October 2010 Product data sheet1. Product profile1.1 General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP/PNP NPN/PNP complement complementNXP Name
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