PBSS4032SPN Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS4032SPN

Código: 4032SPN

Material: Si

Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.7 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Capacitancia de salida (Cc): 65 pF

Ganancia de corriente contínua (hFE): 150

Encapsulados: SO-8

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PBSS4032SPN datasheet

 ..1. Size:493K  philips
 pbss4032spn.pdf pdf_icon

PBSS4032SPN

PBSS4032SPN 30 V NPN/PNP low VCEsat (BISS) transistor Rev. 2 14 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement NXP Name PBSS

 ..2. Size:494K  nxp
 pbss4032spn.pdf pdf_icon

PBSS4032SPN

PBSS4032SPN 30 V NPN/PNP low VCEsat (BISS) transistor Rev. 2 14 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement NXP Name PBSS

 4.1. Size:164K  philips
 pbss4032sp.pdf pdf_icon

PBSS4032SPN

PBSS4032SP 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor Rev. 2 13 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN NPN/PNP complement complement NXP Name

 4.2. Size:165K  nxp
 pbss4032sp.pdf pdf_icon

PBSS4032SPN

PBSS4032SP 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor Rev. 2 13 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN NPN/PNP complement complement NXP Name

MOSTRAR MÁS

Otros transistores... PBSS4021SP, PBSS4021SPN, PBSS4032NX, PBSS4032NZ, PBSS4032PX, PBSS4032PZ, PBSS4032SN, PBSS4032SP, MJE340, PBSS4041NX, PBSS4041NZ, PBSS4041PX, PBSS4041PZ, PBSS4041SN, PBSS4041SP, PBSS4041SPN, PBSS4112PAN