PBSS4041NZ . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PBSS4041NZ
   Código: PB4041NZ
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 2.6 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 105 MHz
   Capacitancia de salida (Cc): 50 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: SOT-223

Búsqueda de reemplazo de transistor bipolar PBSS4041NZ

PBSS4041NZ Datasheet (PDF)

..1. Size:175K philips
pbss4041nz.pdf

PBSS4041NZ60 V, 7 A NPN low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4041PZ.1.2 Features and benefits Very low collector-emitter saturation voltage VCE

..2. Size:201K nxp
pbss4041nz.pdf

PBSS4041NZ60 V, 7 A NPN low VCEsat (BISS) transistorRev. 2 8 August 2012 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PZ.1.2 Features and benefits Very low collector-emitter saturation High

5.1. Size:180K philips
pbss4041nt.pdf

PBSS4041NT60 V, 3.8 A NPN low VCEsat (BISS) transistorRev. 01 31 January 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4041PT.1.2 Features Very low collector-emitter saturation voltage VCEsat High col

5.2. Size:194K philips
pbss4041nx.pdf

PBSS4041NX60 V, 6.2 A NPN low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4041PX.1.2 Features and benefits Very low collector-emitter saturati

5.3. Size:247K nxp
pbss4041nx.pdf

PBSS4041NX60 V, 6.2 A NPN low VCEsat (BISS) transistor10 October 2012 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium powerand flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNPcomplement: PBSS4041PX.1.2 Features and benefits Very low collector-emitter saturation volt

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2N936

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