PBSS4041SP Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS4041SP

Código: 4041SP

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.7 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5.9 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 110 MHz

Capacitancia de salida (Cc): 85 pF

Ganancia de corriente contínua (hFE): 80

Encapsulados: SO-8

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PBSS4041SP datasheet

 ..1. Size:372K  philips
pbss4041sp.pdf pdf_icon

PBSS4041SP

PBSS4041SP 60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistor Rev. 2 18 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN NPN/PNP complement complement NXP Name

 ..2. Size:373K  nxp
pbss4041sp.pdf pdf_icon

PBSS4041SP

PBSS4041SP 60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistor Rev. 2 18 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN NPN/PNP complement complement NXP Name

 0.1. Size:508K  philips
pbss4041spn.pdf pdf_icon

PBSS4041SP

PBSS4041SPN 60 V NPN/PNP low VCEsat (BISS) transistor Rev. 2 20 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement NXP Name PBSS

 0.2. Size:508K  nxp
pbss4041spn.pdf pdf_icon

PBSS4041SP

PBSS4041SPN 60 V NPN/PNP low VCEsat (BISS) transistor Rev. 2 20 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement NXP Name PBSS

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