Биполярный транзистор PBSS4041SP - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PBSS4041SP
Маркировка: 4041SP
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 1.7 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 5.9 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 110 MHz
Ёмкость коллекторного перехода (Cc): 85 pf
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: SO-8
Аналоги (замена) для PBSS4041SP
PBSS4041SP Datasheet (PDF)
pbss4041sp.pdf
PBSS4041SP60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistorRev. 2 18 October 2010 Product data sheet1. Product profile1.1 General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN NPN/PNP complement complementNXP Name
pbss4041sp.pdf
PBSS4041SP60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistorRev. 2 18 October 2010 Product data sheet1. Product profile1.1 General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN NPN/PNP complement complementNXP Name
pbss4041spn.pdf
PBSS4041SPN60 V NPN/PNP low VCEsat (BISS) transistorRev. 2 20 October 2010 Product data sheet1. Product profile1.1 General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN PNP/PNP complement complementNXP NamePBSS
pbss4041spn.pdf
PBSS4041SPN60 V NPN/PNP low VCEsat (BISS) transistorRev. 2 20 October 2010 Product data sheet1. Product profile1.1 General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN PNP/PNP complement complementNXP NamePBSS
pbss4041sn.pdf
PBSS4041SN60 V, 6.7 A NPN/NPN low VCEsat (BISS) transistorRev. 2 18 October 2010 Product data sheet1. Product profile1.1 General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP/PNP NPN/PNP complement complementNXP Name
pbss4041sn.pdf
PBSS4041SN60 V, 6.7 A NPN/NPN low VCEsat (BISS) transistorRev. 2 18 October 2010 Product data sheet1. Product profile1.1 General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP/PNP NPN/PNP complement complementNXP Name
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050