PBSS4160PANS Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS4160PANS

Código: 3F

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.45 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 90 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 70

Encapsulados: SOT-1118D

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PBSS4160PANS datasheet

 ..1. Size:280K  nxp
 pbss4160pans.pdf pdf_icon

PBSS4160PANS

PBSS4160PANS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 11 February 2015 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/PNP complement PBSS4160PANPS. PNP/PNP complement PBSS5160PAPS. 2.

 3.1. Size:359K  nxp
 pbss4160panp.pdf pdf_icon

PBSS4160PANS

PBSS4160PANP 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 14 January 2013 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement PBSS4160PAN. PNP/PNP complement PBSS5160PAP. 2. Features and benefits Very low collecto

 3.2. Size:327K  nxp
 pbss4160panps.pdf pdf_icon

PBSS4160PANS

PBSS4160PANPS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 11 February 2015 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement PBSS4160PANS. PNP/PNP complement PBSS5160PAPS. 2.

 3.3. Size:268K  nxp
 pbss4160pan.pdf pdf_icon

PBSS4160PANS

PBSS4160PAN 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 14 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4160PANP. PNP/PNP complement PBSS5160PAP. 2. Features and benefits Very low collecto

MOSTRAR MÁS

Otros transistores... PBSS4112PAN, PBSS4112PANP, PBSS4130PAN, PBSS4130PANP, PBSS4130QA, PBSS4160PAN, PBSS4160PANP, PBSS4160PANPS, SS8050, PBSS4160QA, PBSS4230PAN, PBSS4230PANP, PBSS4230QA, PBSS4240X, PBSS4240Z, PBSS4260PAN, PBSS4260PANP