PBSS4260QA Todos los transistores

 

PBSS4260QA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS4260QA
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 120 MHz
   Capacitancia de salida (Cc): 4.7 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: SOT-1215
 

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PBSS4260QA Datasheet (PDF)

 ..1. Size:244K  nxp
 pbss4260qa.pdf pdf_icon

PBSS4260QA

PBSS4260QA60 V, 2 A NPN low VCEsat (BISS) transistor28 August 2013 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.PNP complement: PBSS5260QA.2. Features and benefits Very low collector-emitter

 6.1. Size:249K  nxp
 pbss4260pan.pdf pdf_icon

PBSS4260QA

PBSS4260PAN60 V, 2 A NPN/NPN low VCEsat (BISS) transistor12 December 2012 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4260PANP. PNP/PNP complement: PBSS5260PAP.2. Features and benefits Very low collect

 6.2. Size:734K  nxp
 pbss4260pans.pdf pdf_icon

PBSS4260QA

PBSS4260PANS60 V, 2 A NPN/NPN low VCEsat (BISS) double transistor15 December 2015 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadlessmedium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasticpackage with visible and solderable side pads.PNP/PNP complement: PBSS5260PAPS2. Features and benefits

 6.3. Size:340K  nxp
 pbss4260panp.pdf pdf_icon

PBSS4260QA

PBSS4260PANP60 V, 2 A NPN/PNP low VCEsat (BISS) transistor12 December 2012 Product data sheet1. General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: PBSS4260PAN. PNP/PNP complement: PBSS5260PAP.2. Features and benefits Very low collect

MOSTRAR MÁS

Otros transistores... PBSS4160QA , PBSS4230PAN , PBSS4230PANP , PBSS4230QA , PBSS4240X , PBSS4240Z , PBSS4260PAN , PBSS4260PANP , 8550 , PBSS4330PAS , PBSS4360Z , PBSS5112PAP , PBSS5130PAP , PBSS5130QA , PBSS5160PAP , PBSS5160PAPS , PBSS5160QA .

History: BC32740TA | 2SA1541E | BUX11 | KTC5103D

 

 
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