PBSS4260QA Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS4260QA

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 120 MHz

Capacitancia de salida (Cc): 4.7 pF

Ganancia de corriente contínua (hFE): 40

Encapsulados: SOT-1215

 Búsqueda de reemplazo de PBSS4260QA

- Selecciónⓘ de transistores por parámetros

 

PBSS4260QA datasheet

 ..1. Size:244K  nxp
 pbss4260qa.pdf pdf_icon

PBSS4260QA

PBSS4260QA 60 V, 2 A NPN low VCEsat (BISS) transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement PBSS5260QA. 2. Features and benefits Very low collector-emitter

 6.1. Size:249K  nxp
 pbss4260pan.pdf pdf_icon

PBSS4260QA

PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4260PANP. PNP/PNP complement PBSS5260PAP. 2. Features and benefits Very low collect

 6.2. Size:734K  nxp
 pbss4260pans.pdf pdf_icon

PBSS4260QA

PBSS4260PANS 60 V, 2 A NPN/NPN low VCEsat (BISS) double transistor 15 December 2015 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP/PNP complement PBSS5260PAPS 2. Features and benefits

 6.3. Size:340K  nxp
 pbss4260panp.pdf pdf_icon

PBSS4260QA

PBSS4260PANP 60 V, 2 A NPN/PNP low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement PBSS4260PAN. PNP/PNP complement PBSS5260PAP. 2. Features and benefits Very low collect

MOSTRAR MÁS

Otros transistores... PBSS4160QA, PBSS4230PAN, PBSS4230PANP, PBSS4230QA, PBSS4240X, PBSS4240Z, PBSS4260PAN, PBSS4260PANP, 2SC2655, PBSS4330PAS, PBSS4360Z, PBSS5112PAP, PBSS5130PAP, PBSS5130QA, PBSS5160PAP, PBSS5160PAPS, PBSS5160QA