PBSS5360Z Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS5360Z 📄📄
Código: P5360Z
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 65 MHz
Capacitancia de salida (Cc): 28 pF
Ganancia de corriente contínua (hFE): 80
Encapsulados: SOT-223
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PBSS5360Z datasheet
..1. Size:254K nxp
pbss5360z.pdf 
PBSS5360Z 60 V, 3 A PNP low VCEsat (BISS) transistor 19 February 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4360Z. 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capa
6.1. Size:738K nxp
pbss5360pas.pdf
PBSS5360PAS 60 V, 3A PNP low VCEsat (BISS) transistor 12 October 2015 Product data sheet 1. General description PNP low VCEsat Breakthrough in a Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. NPN complement PBSS4360PAS 2. Fe
6.2. Size:230K nxp
pbss5360x.pdf
PBSS5360X 60 V, 3 A PNP low VCEsat (BISS) transistor 3 July 2017 Product data sheet 1. General description PNP low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4360X 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current cap
8.1. Size:171K philips
pbss5320t.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PBSS5320T 20 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Jan 15 Supersedes data of 2002 Aug 08 NXP Semiconductors Product data sheet 20 V, 3 A PBSS5320T PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat and SYMBOL PARAMETER MAX. UNIT corresponding low RCEsa
8.2. Size:172K philips
pbss5350t.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PBSS5350T 50 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Jan 13 Supersedes data of 2002 Aug 08 NXP Semiconductors Product data sheet 50 V, 3 A PBSS5350T PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat and SYMBOL PARAMETER MAX. UNIT corresponding low RCEsa
8.3. Size:125K philips
pbss5320d.pdf
DISCRETE SEMICONDUCTORS DATA SHEET fpage MBD128 PBSS5320D 20 V low VCEsat PNP transistor Product data sheet 2002 Jun 12 NXP Semiconductors Product data sheet 20 V low VCEsat PNP transistor PBSS5320D FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capability VCEO collector-emitter voltage -20 V Improved
8.4. Size:207K philips
pbss5350x.pdf
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Nov 04 Supersedes data of 2003 Nov 21 NXP Semiconductors Product data sheet 50 V, 3 A PBSS5350X PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitter sat
8.5. Size:70K philips
pbss5350d 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS5350D PNP transistor Product specification 2000 Mar 08 Philips Semiconductors Product specification PNP transistor PBSS5350D FEATURES PINNING High current capabilities PIN DESCRIPTION Low VCEsat. 1 collector 2 collector APPLICATIONS 3 base Heavy duty battery powered equipment (Automotive, 4 emitter T
8.6. Size:196K philips
pbss5320x.pdf
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5320X 20 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Nov 04 Supersedes data of 2003 Nov 27 NXP Semiconductors Product data sheet 20 V, 3 A PBSS5320X PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitter sat
8.7. Size:189K philips
pbss5330x.pdf
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5330X 30 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Nov 03 Supersedes data of 2003 Nov 28 NXP Semiconductors Product data sheet 30 V, 3 A PBSS5330X PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitter sat
8.8. Size:252K philips
pbss5350d.pdf
PBSS5350D 50 V, 3 A PNP low VCEsat (BISS) transistor Rev. 6 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4350D 1.2 Features and benefits Low collector-emitter saturation AEC-Q101 qualified
8.9. Size:158K philips
pbss5330pa.pdf
PBSS5330PA 30 V, 3 A PNP low VCEsat (BISS) transistor Rev. 01 19 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4330PA. 1.2 Features and benefits
8.10. Size:401K nxp
pbss5320t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
8.11. Size:95K nxp
pbss5350ss.pdf
PBSS5350SS 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor Rev. 01 3 April 2007 Product data sheet 1. Product profile 1.1 General description PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/PNP NPN/NPN complement complement NXP Name PBSS5350S
8.12. Size:401K nxp
pbss5350t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
8.13. Size:149K nxp
pbss5350z.pdf
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS5350Z 50 V low VCEsat PNP transistor Product data sheet 2003 May 13 Supersedes data of 2003 Jan 20 NXP Semiconductors Product data sheet 50 V low VCEsat PNP transistor PBSS5350Z FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High collector current capabili
8.14. Size:337K nxp
pbss5320d.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
8.15. Size:437K nxp
pbss5350x.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
8.16. Size:248K nxp
pbss5330pas.pdf
PBSS5330PAS 30 V, 3 A PNP low VCEsat (BISS) transistor 11 September 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. NPN complement PBSS4330PAS 2. F
8.17. Size:246K nxp
pbss5350th.pdf
PBSS5350TH 50 V, 3 A PNP low VCEsat (BISS) transistor 21 June 2017 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collect
8.18. Size:256K nxp
pbss5320x.pdf
PBSS5320X 20 V, 3 A PNP low VCEsat (BISS) transistor 27 May 2019 Product data sheet 1. General description PNP low VCEsat transistor in a medium power flat lead SOT89 plastic package. NPN complement PBSS4320X 2. Features and benefits SOT89 (SC-62) package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Higher efficiency le
8.19. Size:417K nxp
pbss5330x.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
8.20. Size:971K nxp
pbss5350d.pdf
PBSS5350D 50 V, 3 A PNP low VCEsat (BISS) transistor Rev. 6 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4350D 1.2 Features and benefits Low collector-emitter saturation AEC-Q101 qualified
8.21. Size:704K nxp
pbss5330pa.pdf
PBSS5330PA 30 V, 3 A PNP low VCEsat (BISS) transistor 7 April 2015 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4330PA. 2. Features and benefits Low collector-emitter saturatio
8.22. Size:1328K kexin
pbss5350t.pdf
SMD Type Transistors PNP Transistors PBSS5350T (KBSS5350T) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High collector current capability High collector current gain 1 2 Improved efficiency due to reduced heat generation. +0.1 +0.05 0.95-0.1 0.1-0.01 Low collector-emitter saturation voltage VCEsat and +0.1 1.9-0.1 corresponding low RCEsat
Otros transistores... PBSS5160T-HF, PBSS5230PAP, PBSS5230QA, PBSS5240X, PBSS5240Z, PBSS5260PAP, PBSS5260QA, PBSS5330PAS, 2SC2383, KSA614F, KSB13002AR, KSB13003A, KSB13003AR, KSB13003C, KSB13003CR, KSB13003ER, KSB13003H
