KSH5027AF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSH5027AF
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 1100 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 15 MHz
Capacitancia de salida (Cc): 60 pF
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de transistor bipolar KSH5027AF
KSH5027AF Datasheet (PDF)
ksh5027af.pdf
KSH5027AF SEMIHOW REV.A0,Oct 2007 KSH5027AFKSH5027AF High Voltage and High Reliability - High Speed Switching - Wide SOA 3 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 50 Watts TO-220F CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector Collector-Base Voltage VCBO 1100 V 3. Emitter Collector-Emitter Vo
ksh5027a.pdf
KSH5027A SEMIHOW REV.A0,Oct 2007 KSH5027AKSH5027A High Voltage and High Reliability - High Speed Switching - Wide SOA 3 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 50 Watts TO-220 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector Collector-Base Voltage VCBO 1100 V 3. Emitter Collector-Emitter Voltag
ksh5027f.pdf
KSH5027F SEMIHOW REV.A0,Oct 2007 KSH5027FKSH5027F High Voltage and High Reliability - High Speed Switching - Wide SOA 3 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 50 Watts TO-220F CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector Collector-Base Voltage VCBO 1100 V 3. Emitter Collector-Emitter Volta
ksh5027.pdf
KSH5027 SEMIHOW REV.A0,Oct 2007 KSH5027KSH5027 High Voltage and High Reliability - High Speed Switching - Wide SOA 3 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 50 Watts TO-220 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector Collector-Base Voltage VCBO 1100 V 3. Emitter Collector-Emitter Voltage V
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