WBN13002 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WBN13002
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 12 W
   Tensión colector-base (Vcb): 600 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO-92

Búsqueda de reemplazo de transistor bipolar WBN13002

WBN13002 Datasheet (PDF)

..1. Size:378K winsemi
wbn13002.pdf

WBN13002WBN13002WBN13002WBN13002High Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system, switching modepower supply.Absolute Maximum RatingsSymbol Parameter T

0.1. Size:317K winsemi
wbn13002ld.pdf

WBN13002LDWBN13002LDWBN13002LDWBN13002LDHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage , High speedSwitching characteristics required such as lightingsystem, switching mode power supply.Absolute Maximum RatingsSymbol P

7.1. Size:308K winsemi
wbn13003b2d.pdf

WBN13003B2DWBN13003B2DWBN13003B2DWBN13003B2DHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switching modepower supply.

7.2. Size:268K winsemi
wbn13003b.pdf

WBN13003BWBN13003BWBN13003BWBN13003BHighVoltageFast-SwitchingNPNPowerTransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedswitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Parameter Tes

7.3. Size:468K winsemi
wbn13003a1.pdf

WBN13003A1WBN13003A1WBN13003A1WBN13003A1High Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage , High speedswitching Characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Par

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SA950O | DTB713ZE

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050