UMZ1NFHA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

UMZ1N FHADatasheetGeneral purpose transistor (dual transistors)AEC-Q101 QualifiedlOutlinelParameter Value SOT-363VCEO50VSC-88IC150mA UMT6 Parameter Value VCEO-50VIC-150mAlFeatures lInner circuitl l1)Both a 2SA1037AK chip and 2

EMZ1 / UMZ1N / IMZ1A EMZ1FHA / UMZ1NFHA / IMZ1AFRATransistors AEC-Q101 QualifiedGeneral purpose transistor (dual transistors) EMZ1 / UMZ1N / IMZ1A EMZ1FHA / UMZ1NFHA / IMZ1AFRA Features External dimensions (Unit : mm)1) Both a 2SA1037AK chip and 2SC2412K chip in a 2SA1037AKFRA 2SC2412KFRAEMZ1EMZ1FHAEMT or UMT or SMT package. (4) (3)2) Mounting possible with EMT3 o

EMZ1 / UMZ1N / IMZ1ADatasheetGeneral purpose transistor (dual transistors)lOutlinelParameter Value SOT-563 SOT-363VCEO50VIC150mA EMZ1 UMZ1N(EMT6) (UMT6) Parameter Value SOT-457 VCEO-50VIC-150mA IMZ1A(SMT6) lF

EMZ1 / UMZ1N / IMZ1A Transistors General purpose transistor (dual transistors) EMZ1 / UMZ1N / IMZ1A Features External dimensions (Unit : mm) 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMZ1EMT or UMT or SMT package. (4) (3)2) Mounting possible with EMT3 or UMT3 or SMT3 (5) (2)(6) (1)1.2automatic mounting machines. 1.63) Transistor elements are independent,

UMZ1NT1GComplementary DualGeneral PurposeAmplifier TransistorPNP and NPN Surface Mountwww.onsemi.comFeatures High Voltage and High Current: VCEO = 50 V, IC = 200 mA(6) (5) (4) High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3AQ1 Q2ESD Rating - Machine Model: C NSV Prefix for Automotive and Other Applications Requiri

UMZ1NT1GComplementary DualGeneral PurposeAmplifier TransistorPNP and NPN Surface Mounthttp://onsemi.comFeatures High Voltage and High Current: VCEO = 50 V, IC = 200 mA(6) (5) (4) High hFE: hFE = 200X400 Moisture Sensitivity Level: 1Q1 Q2 ESD Rating - Human Body Model: 3AESD Rating - Machine Model: C These Devices are Pb-Free, Halogen Free/BFR Free and

UMZ1N 0.15 W, 150 mA, 60 V Silicon Epitaxial Planar Elektronische Bauelemente Power Management (Dual Transistors) RoHS Compliant Product SOT-363 A suffix of -C specifies halogen & lead-free AFEATURES EL 2SA1037AK and 2SC2412K are housed independently in a package. Transistor elements independent, eliminating interference. Mounting

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Power management Dual-transistors UMZ1NDUAL TRANSISTOR (NPN+PNP) SOT-363 DESCRIPTION Silicon epitaxial planar transistor FEATURES 2SA1037AK and 2SC2412K are housed independentlyin a package Transistor elements independent, eliminating interference Mounting cost and area can be cut in halfMARKING: Z1 Z1TR1 MAX

SEMICONDUCTORUMZ1NTECHNICAL DATADual General Purpose TransistorsNPN/PNP Duals (Complimentary)65 These transistors are designed for general purpose amplifier4applications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.12We declare that the material of product compliance with RoHS requirements. 3SOT-363/SC-883 2

RoHS COMPLIANT UMZ1NDual NPN+PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN/PNP Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking: Z1 Equivalent circuit 1 / 7 S-S3181 Yan