LS311 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LS311
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.01 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 200 MHz
Capacitancia de salida (Cc): 2 pF
Ganancia de corriente contínua (hFE): 150
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LS311 datasheet
ls310 ls311 ls312 ls313.pdf
LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS FEATURES VERY HIGH GAIN hFE 200@10 A-1mA TO71 & TO78 TIGHT VBE MATCHING VBE1 -VBE1 = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 C (unless otherwise noted) 5 3 E2 E1 Collector 6 2 IC 10mA B2 B1 Current 7 1 Maximum Temperatures C2 C1 Storage Temperature -65 to +150 C
auirls3114z.pdf
PD - 96412 AUTOMOTIVE GRADE AUIRLS3114Z HEXFET Power MOSFET Features VDSS 40V D l Advanced Process Technology RDS(on) typ. l Ultra Low On-Resistance 3.8m l Enhanced dV/dT and dI/dT capability max. 4.9m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 122A l Repetitive Avalanche Allowed up to Tjmax S ID (Wirebond Limited) 56A l Lead-Free, RoHS
auirls3114z.pdf
AUTOMOTIVE GRADE AUIRLS3114Z HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 3.8m Logic Level Gate Drive max. 4.9m Enhanced dv/dt and di/dt capability ID (Silicon Limited) 122A 175 C Operating Temperature Fast Switching ID (Package Limited) 56A Repetitive Avalanche Allow
Otros transistores... LMBTA06WT1G , LMBTA43LT1G , LMBTA56WT1G , LMSD1819A-RT1G , LS301 , LS302 , LS303 , LS310 , NJW0281G , LS312 , LS313 , LS3250A , LS3250B , LS3250C , LS350 , LS351 , LS352 .
History: LMBTA43LT1G
History: LMBTA43LT1G
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