LS311 Datasheet, Equivalent, Cross Reference Search
Type Designator: LS311
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: TO-78 TO-71
LS311 Transistor Equivalent Substitute - Cross-Reference Search
LS311 Datasheet (PDF)
ls310 ls311 ls312 ls313.pdf
LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS FEATURES VERY HIGH GAIN hFE200@10A-1mA TO71 & TO78TIGHT VBE MATCHING |VBE1 -VBE1| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25C (unless otherwise noted) 5 3E2 E1Collector 6 2IC 10mA B2 B1 Current 7 1Maximum Temperatures C2 C1Storage Temperature -65 to +150C
auirls3114z.pdf
PD - 96412AUTOMOTIVE GRADEAUIRLS3114ZHEXFET Power MOSFETFeaturesVDSS40VDl Advanced Process TechnologyRDS(on) typ.l Ultra Low On-Resistance 3.8ml Enhanced dV/dT and dI/dT capability max. 4.9ml 175C Operating TemperatureGl Fast Switching ID (Silicon Limited) 122Al Repetitive Avalanche Allowed up to TjmaxSID (Wirebond Limited)56A l Lead-Free, RoHS
auirls3114z.pdf
AUTOMOTIVE GRADE AUIRLS3114Z HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 3.8m Logic Level Gate Drive max. 4.9m Enhanced dv/dt and di/dt capability ID (Silicon Limited) 122A 175C Operating Temperature Fast Switching ID (Package Limited) 56A Repetitive Avalanche Allow
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
