MJ13009 Todos los transistores

 

MJ13009 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJ13009
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 700 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 12 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Capacitancia de salida (Cc): 180 pF
   Ganancia de corriente contínua (hfe): 6
   Paquete / Cubierta: TO-220AB
 
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MJ13009 Datasheet (PDF)

 ..1. Size:82K  njs
mj13009.pdf pdf_icon

MJ13009

 8.1. Size:33K  no
mj13001a.pdf pdf_icon

MJ13009

 9.1. Size:207K  inchange semiconductor
mj13070 mj13071.pdf pdf_icon

MJ13009

isc Silicon NPN Power Transistors MJ13070/13071DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 400V(Min)MJ13070CEO(SUS)= 450V(Min)MJ13071High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical.

 9.2. Size:208K  inchange semiconductor
mj13090 mj13091.pdf pdf_icon

MJ13009

isc Silicon NPN Power Transistors MJ13090/13091DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 400V(Min)MJ13090CEO(SUS)= 450V(Min)MJ13091High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical.

Otros transistores... MJ11012G , MJ11015G , MJ11016G , MJ11021G , MJ11022G , MJ11028G , MJ11032G , MJ11033G , BC547 , MJ14002G , MJ14003G , MJ15001G , MJ15003G , MJ15004G , MJ15015G , MJ15016G , MJ15022G .

 

 
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