MJ13009 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJ13009
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 700 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Capacitancia de salida (Cc): 180 pF
Ganancia de corriente contínua (hfe): 6
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de transistor bipolar MJ13009
MJ13009 Datasheet (PDF)
mj13070 mj13071.pdf
isc Silicon NPN Power Transistors MJ13070/13071DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 400V(Min)MJ13070CEO(SUS)= 450V(Min)MJ13071High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical.
mj13090 mj13091.pdf
isc Silicon NPN Power Transistors MJ13090/13091DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 400V(Min)MJ13090CEO(SUS)= 450V(Min)MJ13091High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical.
mj13070 13071.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13070/13071 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)MJ13070 = 450V(Min)MJ13071 High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly su
mj13090 13091.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13090/13091 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)MJ13090 = 450V(Min)MJ13091 High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly su
mj13080 13081.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13080/13081 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)MJ13080 = 450V(Min)MJ13081 High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly su
mj13080 mj13081.pdf
isc Silicon NPN Power Transistors MJ13080/13081DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 400V(Min)MJ13080CEO(SUS)= 450V(Min)MJ13081High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical.
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS