MJD117T4G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MJD112,NJVMJD112T4G (NPN),MJD117,NJVMJD117T4G (PNP)Complementary Darlingtonhttp://onsemi.comPower TransistorsSILICONDPAK For Surface Mount ApplicationsPOWER TRANSISTORSDesigned for general purpose power and switching such as output or2 AMPERESdriver stages in applications such as switching regulators, converters,100 VOLTS, 20 WATTSand power amplifiers.Features

Order this documentMOTOROLAby MJD112/DSEMICONDUCTOR TECHNICAL DATANPN*MJD112Complementary DarlingtonPNPMJD117*Power TransistorsDPAK For Surface Mount Applications*Motorola Preferred DeviceDesigned for general purpose power and switching such as output or driver stagesSILICONin applications such as switching regulators, converters, and power amplifiers.POWER TRANS

MJD112MJD117COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE SURFACE-MOUNTING TO-252 (DPAK)POWER PACKAGE IN TAPE & REEL(SUFFIX T4)3 ELECTRICAL SIMILAR TO TIP112 AND1TIP117APPLICATIONS GENERAL PURPOSE SWITCHING ANDDPAKAMPLIFIERTO-252(Suffix

MJD117D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix)D-PAK I-PAK11 Electrically Similar to Popular TIP1171.Base 2.Collector 3.EmitterPNP Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted

MJD112 (NPN),MJD117 (PNP)Complementary DarlingtonPower TransistorsDPAK For Surface Mount Applicationshttp://onsemi.comDesigned for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters,SILICONand power amplifiers.POWER TRANSISTORSFeatures2 AMPERES Lead Formed for Surface Mount Applications in Plas

MJD112,NJVMJD112T4G (NPN),MJD117,NJVMJD117T4G (PNP)Complementary Darlingtonhttp://onsemi.comPower TransistorsSILICONDPAK For Surface Mount ApplicationsPOWER TRANSISTORSDesigned for general purpose power and switching such as output or2 AMPERESdriver stages in applications such as switching regulators, converters,100 VOLTS, 20 WATTSand power amplifiers.Features

MJD112,NJVMJD112T4G (NPN),MJD117,NJVMJD117T4G (PNP)Complementary Darlingtonhttp://onsemi.comPower TransistorsSILICONDPAK For Surface Mount ApplicationsPOWER TRANSISTORSDesigned for general purpose power and switching such as output or2 AMPERESdriver stages in applications such as switching regulators, converters,100 VOLTS, 20 WATTSand power amplifiers.Features

MJD112,NJVMJD112T4G (NPN),MJD117,NJVMJD117T4G (PNP)Complementary Darlingtonhttp://onsemi.comPower TransistorsSILICONDPAK For Surface Mount ApplicationsPOWER TRANSISTORSDesigned for general purpose power and switching such as output or2 AMPERESdriver stages in applications such as switching regulators, converters,100 VOLTS, 20 WATTSand power amplifiers.Features

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyCOMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD112 NPNMJD117 PNPDPAK (TO-252)Plastic PackageDesigned for General Purpose Power and Switching ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITVCBO 100Collector Base Voltage VVCEO 100Collector Emitter Voltage VE

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors MJD117 TRANSISTOR (PNP)TO-252-2L FEATURES 1. BASE High DC Current Gain Electrically Similar to Popular TIP1172. COLLECTOR2133. EMITTER MJD117=Device code Solid dot=Green moldinn compound device, if none,the normal deviceMJD117XXXX=CodeXXXXMAXIMUM RATINGS

SEMICONDUCTOR MJD117/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORMONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.AI C JFEATURESDIM MILLIMETERSHigh DC Current Gain. _A 6.60 + 0.2_B 6.10 + 0.2: hFE=1000(Min.), VCE=-4V, IC=-1A._C 5.0 + 0.2_D 1.10 + 0.2Low Collector-Emitter Saturation Voltage._E 2.70 + 0.2_F 2.30 +

isc Silicon PNP Darlington Power Transistor MJD117DESCRIPTIONHigh DC current gainBuilt-in a damper diode at E-CLead formed for surface mount applications(NO suffix)Straight lead(IPAK,Isuffix)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low sp