MJD117T4G Datasheet. Specs and Replacement
Type Designator: MJD117T4G
SMD Transistor Code: J117G
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 25 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO-252
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MJD117T4G datasheet
..1. Size:224K onsemi
mjd117t4g.pdf 
MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) Complementary Darlington http //onsemi.com Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS Designed for general purpose power and switching such as output or 2 AMPERES driver stages in applications such as switching regulators, converters, 100 VOLTS, 20 WATTS and power amplifiers. Features ... See More ⇒
8.1. Size:306K motorola
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Order this document MOTOROLA by MJD112/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD112 Complementary Darlington PNP MJD117* Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose power and switching such as output or driver stages SILICON in applications such as switching regulators, converters, and power amplifiers. POWER TRANS... See More ⇒
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MJD117 D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix) D-PAK I-PAK 11 Electrically Similar to Popular TIP117 1.Base 2.Collector 3.Emitter PNP Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted... See More ⇒
8.4. Size:153K onsemi
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MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications http //onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, SILICON and power amplifiers. POWER TRANSISTORS Features 2 AMPERES Lead Formed for Surface Mount Applications in Plas... See More ⇒
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mjd117rlg.pdf
MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) Complementary Darlington http //onsemi.com Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS Designed for general purpose power and switching such as output or 2 AMPERES driver stages in applications such as switching regulators, converters, 100 VOLTS, 20 WATTS and power amplifiers. Features ... See More ⇒
8.6. Size:224K onsemi
mjd117-1g.pdf
MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) Complementary Darlington http //onsemi.com Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS Designed for general purpose power and switching such as output or 2 AMPERES driver stages in applications such as switching regulators, converters, 100 VOLTS, 20 WATTS and power amplifiers. Features ... See More ⇒
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MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) Complementary Darlington http //onsemi.com Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS Designed for general purpose power and switching such as output or 2 AMPERES driver stages in applications such as switching regulators, converters, 100 VOLTS, 20 WATTS and power amplifiers. Features ... See More ⇒
8.8. Size:84K cdil
mjd112 mjd117.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD112 NPN MJD117 PNP DPAK (TO-252) Plastic Package Designed for General Purpose Power and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCBO 100 Collector Base Voltage V VCEO 100 Collector Emitter Voltage V E... See More ⇒
8.9. Size:1078K jiangsu
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors MJD117 TRANSISTOR (PNP) TO-252-2L FEATURES 1. BASE High DC Current Gain Electrically Similar to Popular TIP117 2. COLLECTOR 2 1 3 3. EMITTER MJD117=Device code Solid dot=Green moldinn compound device, if none,the normal device MJD117 XXXX=Code XXXX MAXIMUM RATINGS ... See More ⇒
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SEMICONDUCTOR MJD117/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A I C J FEATURES DIM MILLIMETERS High DC Current Gain. _ A 6.60 + 0.2 _ B 6.10 + 0.2 hFE=1000(Min.), VCE=-4V, IC=-1A. _ C 5.0 + 0.2 _ D 1.10 + 0.2 Low Collector-Emitter Saturation Voltage. _ E 2.70 + 0.2 _ F 2.30 +... See More ⇒
8.11. Size:250K inchange semiconductor
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isc Silicon PNP Darlington Power Transistor MJD117 DESCRIPTION High DC current gain Built-in a damper diode at E-C Lead formed for surface mount applications(NO suffix) Straight lead(IPAK, I suffix) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low sp... See More ⇒
Detailed specifications: MJB45H11T4G, MJB5742T4G, MJD112-1G, MJD112G, MJD112RLG, MJD112T4G, MJD117-1G, MJD117G, A733, MJD122G, MJD122T4G, MJD127G, MJD127T4G, MJD128T4G, MJD148T4G, MJD200G, MJD200RLG
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