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MJD122T4G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJD122T4G
   Código: J112G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Capacitancia de salida (Cc): 200 pF
   Ganancia de corriente contínua (hfe): 1000
   Paquete / Cubierta: TO-252

 Búsqueda de reemplazo de transistor bipolar MJD122T4G

 

MJD122T4G Datasheet (PDF)

 ..1. Size:205K  onsemi
mjd122t4g.pdf pdf_icon

MJD122T4G

MJD122, NJVMJD122T4G (NPN), MJD127 (PNP) Complementary Darlington Power Transistor http //onsemi.com DPAK For Surface Mount Applications SILICON Designed for general purpose amplifier and low speed switching POWER TRANSISTOR applications. 8 AMPERES 100 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements for 2N

 8.1. Size:284K  motorola
mjd122re mjd127.pdf pdf_icon

MJD122T4G

Order this document MOTOROLA by MJD122/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD122 Complementary Darlington PNP MJD127* Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) POWER TRANSISTORS

 8.2. Size:93K  st
mjd122 mjd127.pdf pdf_icon

MJD122T4G

MJD122 MJD127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 ) 3 ELECTRICAL SIMILAR TO TIP122 AND TIP127 1 APPLICATIONS GENERAL PURPOSE SWITCHING AND DPAK AMPLIFIER. TO-252 (Suffix

 8.3. Size:142K  onsemi
njvmjd122 njvmjd127.pdf pdf_icon

MJD122T4G

MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor http //onsemi.com DPAK For Surface Mount Applications SILICON Designed for general purpose amplifier and low speed switching POWER TRANSISTOR applications. 8 AMPERES 100 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements

Otros transistores... MJD112-1G , MJD112G , MJD112RLG , MJD112T4G , MJD117-1G , MJD117G , MJD117T4G , MJD122G , 2SC4793 , MJD127G , MJD127T4G , MJD128T4G , MJD148T4G , MJD200G , MJD200RLG , MJD200T4G , MJD210G .

History: KC309B | BDT62CF | 2SD23 | 2SC2905 | GCN53 | KD606 | K2122B

 

 
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