MJD122T4G - Даташиты. Аналоги. Основные параметры

MJD122, NJVMJD122T4G (NPN), MJD127 (PNP) Complementary Darlington Power Transistor http //onsemi.com DPAK For Surface Mount Applications SILICON Designed for general purpose amplifier and low speed switching POWER TRANSISTOR applications. 8 AMPERES 100 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements for 2N

Order this document MOTOROLA by MJD122/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD122 Complementary Darlington PNP MJD127* Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) POWER TRANSISTORS

MJD122 MJD127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 ) 3 ELECTRICAL SIMILAR TO TIP122 AND TIP127 1 APPLICATIONS GENERAL PURPOSE SWITCHING AND DPAK AMPLIFIER. TO-252 (Suffix

MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor http //onsemi.com DPAK For Surface Mount Applications SILICON Designed for general purpose amplifier and low speed switching POWER TRANSISTOR applications. 8 AMPERES 100 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements

MJD122, NJVMJD122T4G (NPN), MJD127 (PNP) Complementary Darlington Power Transistor http //onsemi.com DPAK For Surface Mount Applications SILICON Designed for general purpose amplifier and low speed switching POWER TRANSISTOR applications. 8 AMPERES 100 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements for 2N

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD122 NPN MJD127 PNP DPAK (TO-252) Plastic Package Designed for General Purpose Amplifier and Low Speed Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 100 V Collector Emitter Voltage V

MJD122(NPN) TO-251/TO-525-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High DC current gain Electrically similar to popular TIP122 Built-in a damper diode at E-C TO-252-2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Bas

MJD122 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 Features * High DC current gain D-PAK(TO-252) * Electrically similar to popular TIP122 * Built-in a damper diode at E-C ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Value Unit VCBO Collector-Base Voltage 100 V VCEO 100 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5

SEMICONDUCTOR MJD122I TECHNICAL DATA NPN Silicon Darlington Transistor MJD122I TO-251-3L FEATURES High DC Current Gain 1.BASE Electrically Similar to Popular TIP122 Built-in a Damper Diode at E-C 2.COLLECTOR 3.EMITTER We declare that the material of product compliance with RoHS requirements. Equivalent Circuit C B R1 R2 R1 8k E R2 0.12k MAXI

SEMICONDUCTOR MJD122 TECHNICAL DATA NPN Silicon Darlington Transistor MJD122I A I FEATURES C J High DC Current Gain Electrically Similar to Popular TIP122 DIM MILLIMETERS A 6.50 0.2 Built-in a Damper Diode at E-C B 5.60 0.2 C 5.20 0.2 D 1.50 0.2 We declare that the material of E 2.70 0.2 F 2.30 0.1 product compliance with RoHS requirements.

MJD122D Silicon NPN Darlington Power Transistor DESCRIPTION Low Collector-Emitter saturation voltage Lead formed for surface mount applications High DC current gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a