MJD200G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJD200G  📄📄 

Código: J200G

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 12.5 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 8 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 65 MHz

Capacitancia de salida (Cc): 80 pF

Ganancia de corriente contínua (hFE): 45

Encapsulados: TO-252

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MJD200G datasheet

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MJD200G

MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface http //onsemi.com Mount Applications Designed for low voltage, low-power, high-gain audio SILICON amplifier applications. POWER TRANSISTORS Features 5 AMPERES Collector-Emitter Sustaining Voltage - 25 VOLTS, 12.5 WATTS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc

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 mjd200re mjd210.pdf pdf_icon

MJD200G

Order this document MOTOROLA by MJD200/D SEMICONDUCTOR TECHNICAL DATA NPN MJD200 Complementary PNP Plastic Power Transistors MJD210 NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low power, high gain audio amplifier applications. SILICON POWER TRANSISTORS Collector Emitter Sustaining Voltage 5 AMPERES VCEO(sus) = 25 Vdc (Min) @

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 mjd200 mjd210.pdf pdf_icon

MJD200G

MJD200 MJD210 COMPLEMENTARY SILICON POWER TRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4) APPLICATIONS 3 AUDIO AMPLIFIERS 1 DESCRIPTION The MJD200 is an Epitaxial-Base NPN transistor designed for low voltage, low power, high gain, DPAK audio amplifier applications. TO-252 Th

 8.3. Size:183K  onsemi
 mjd200rlg.pdf pdf_icon

MJD200G

MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface http //onsemi.com Mount Applications Designed for low voltage, low-power, high-gain audio SILICON amplifier applications. POWER TRANSISTORS Features 5 AMPERES Collector-Emitter Sustaining Voltage - 25 VOLTS, 12.5 WATTS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc

MOSTRAR MÁS

Otros transistores... MJD117G, MJD117T4G, MJD122G, MJD122T4G, MJD127G, MJD127T4G, MJD128T4G, MJD148T4G, B772, MJD200RLG, MJD200T4G, MJD210G, MJD210RLG, MJD210T4G, MJD243G, MJD243T4G, MJD253-1G