MJD200G Datasheet, Equivalent, Cross Reference Search
Type Designator: MJD200G
SMD Transistor Code: J200G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 12.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 65 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 45
Noise Figure, dB: -
Package: TO-252
MJD200G Transistor Equivalent Substitute - Cross-Reference Search
MJD200G Datasheet (PDF)
mjd200g.pdf
MJD200 (NPN), MJD210,NJVMJD210T4G (PNP)Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For Surfacehttp://onsemi.comMount ApplicationsDesigned for low voltage, low-power, high-gain audioSILICONamplifier applications.POWER TRANSISTORSFeatures5 AMPERES Collector-Emitter Sustaining Voltage -25 VOLTS, 12.5 WATTSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
mjd200re mjd210.pdf
Order this documentMOTOROLAby MJD200/DSEMICONDUCTOR TECHNICAL DATANPNMJD200ComplementaryPNPPlastic Power TransistorsMJD210NPN/PNP Silicon DPAK For Surface MountApplications. . . designed for low voltage, lowpower, highgain audio amplifier applications. SILICONPOWER TRANSISTORS CollectorEmitter Sustaining Voltage 5 AMPERESVCEO(sus) = 25 Vdc (Min) @
mjd200 mjd210.pdf
MJD200MJD210COMPLEMENTARY SILICON POWER TRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES SURFACE-MOUNTING TO-252 (DPAK)POWER PACKAGE IN TAPE & REEL(SUFFIX T4) APPLICATIONS 3 AUDIO AMPLIFIERS1DESCRIPTION The MJD200 is an Epitaxial-Base NPN transistordesigned for low voltage, low power, high gain,DPAKaudio amplifier applications.TO-252Th
mjd200rlg.pdf
MJD200 (NPN), MJD210,NJVMJD210T4G (PNP)Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For Surfacehttp://onsemi.comMount ApplicationsDesigned for low voltage, low-power, high-gain audioSILICONamplifier applications.POWER TRANSISTORSFeatures5 AMPERES Collector-Emitter Sustaining Voltage -25 VOLTS, 12.5 WATTSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
njvmjd210 mjd200.pdf
MJD200 (NPN),MJD210 (PNP)Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For Surfacehttp://onsemi.comMount ApplicationsDesigned for low voltage, low-power, high-gain audioSILICONamplifier applications.POWER TRANSISTORSFeatures5 AMPERES High DC Current Gain25 VOLTS, 12.5 WATTS Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix
mjd200 mjd210.pdf
Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For SurfaceMount ApplicationsMJD200 (NPN),MJD210 (PNP)www.onsemi.comDesigned for low voltage, low-power, high-gain audioamplifier applications.SILICONPOWER TRANSISTORSFeatures High DC Current Gain5 AMPERES Lead Formed for Surface Mount Applications in Plastic Sleeves25 VOLTS, 12.5 WATTS(No Suffix)
mjd200t4g.pdf
MJD200 (NPN), MJD210,NJVMJD210T4G (PNP)Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For Surfacehttp://onsemi.comMount ApplicationsDesigned for low voltage, low-power, high-gain audioSILICONamplifier applications.POWER TRANSISTORSFeatures5 AMPERES Collector-Emitter Sustaining Voltage -25 VOLTS, 12.5 WATTSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
mjd200.pdf
isc Silicon NPN Power Transistor MJD200DESCRIPTIONDC Current Gain-: h = 70(Min) @ I = 0.5AFE CLow Collector Saturation Voltage-: V = 0.3V(Max.)@ I = 0.5 ACE(sat) CComplement to the PNP MJD210Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low power audio amplifier and low-current,high-speed switching a
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
