MJD3055G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MJD2955,NJVMJD2955T4G (PNP)MJD3055,NJVMJD3055T4G (NPN)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount ApplicationsSILICONPOWER TRANSISTORSDesigned for general purpose amplifier and low speed switching10 AMPERESapplications.60 VOLTS, 20 WATTSFeatures Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix) Straight Lea

Order this documentMOTOROLAby MJD2955/DSEMICONDUCTOR TECHNICAL DATANPNMJD2955Complementary PowerPNPMJD3055TransistorsDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switching applications.SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)POWER TRANSISTORS Straight Lead Version in Plastic S

MJD2955MJD3055COMPLEMENTARY POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES SURFACE-MOUNTING TO-252 (DPAK)POWER PACKAGE IN TAPE & REEL(SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955TAND MJE3055T3APPLICATIONS 1 GENERAL PURPOSE SWITCHING ANDAMPLIFIERDPAKDESCRIPTION TO-252The MJD2955 and MJD3055 form(Suffix "T4")complementary PNP-NPN pairs. They a

MJD3055General Purpose AmplifierLow Speed Switching Applications D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, -I Suffix)D-PAK I-PAK11 Electrically Similar to Popular MJE3055T1.Base 2.Collector 3.Emitter DC Current Gain Specified to 10A High Current Gain - Bandwidth Product: fT = 2

MCCMicro Commercial ComponentsTM MMJD305520736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Silicon Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates NPN epitaxial planer RoHS Compliant. See ordering information) Capable of 1.25Watts of Power Dissipation.Transistors Collector-cu

MJD2955 (PNP),MJD3055 (NPN)Complementary PowerTransistorsDPAK for Surface Mount Applicationshttp://onsemi.comDesigned for general purpose amplifier and low speed switchingapplications.SILICONFeatures POWER TRANSISTORS10 AMPERES Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix)60 VOLTS, 20 WATTS Straight Lead Version in Plastic Sleeves (

MJD2955,NJVMJD2955T4G (PNP)MJD3055,NJVMJD3055T4G (NPN)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount ApplicationsSILICONPOWER TRANSISTORSDesigned for general purpose amplifier and low speed switching10 AMPERESapplications.60 VOLTS, 20 WATTSFeatures Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix) Straight Lea

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MJD2955 (PNP),MJD3055 (NPN)Complementary PowerTransistorsDPAK for Surface Mount Applicationshttp://onsemi.comDesigned for general purpose amplifier and low speed switchingapplications.SILICONFeatures POWER TRANSISTORS10 AMPERES Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix)60 VOLTS, 20 WATTS Straight Lead Version in Plastic Sleeves (

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate TransistorsMJD3055 TRANSISTOR (NPN)TO-252-2LFEATURES Designed for General Purpose Amplifier and Low Speed 1.BASESwitching Applications2.COLLECTOR2 Electrically Simiar to MJE305513.EMITTER 3 DC Current Gain Specified to10 AmperesEquivalent Circuit MJD3055=Device code Solid d

MJD3055(NPN)TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 FeaturesDesigned for general purpose amplifier and low speed switching applications . Electrically simiar to MJE3055. DC current gain specified to10 Amperes TO-252-2LMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 70 V