MJD3055G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJD3055G
Código: J3055G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 70 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de transistor bipolar MJD3055G
MJD3055G Datasheet (PDF)
mjd3055g.pdf
MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose amplifier and low speed switching 10 AMPERES applications. 60 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lea
mjd2955r mjd3055.pdf
Order this document MOTOROLA by MJD2955/D SEMICONDUCTOR TECHNICAL DATA NPN MJD2955 Complementary Power PNP MJD3055 Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) POWER TRANSISTORS Straight Lead Version in Plastic S
mjd2955 mjd3055.pdf
MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 APPLICATIONS 1 GENERAL PURPOSE SWITCHING AND AMPLIFIER DPAK DESCRIPTION TO-252 The MJD2955 and MJD3055 form (Suffix "T4") complementary PNP-NPN pairs. They a
mjd3055.pdf
MJD3055 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, -I Suffix) D-PAK I-PAK 11 Electrically Similar to Popular MJE3055T 1.Base 2.Collector 3.Emitter DC Current Gain Specified to 10A High Current Gain - Bandwidth Product fT = 2
Otros transistores... MJD210T4G , MJD243G , MJD243T4G , MJD253-1G , MJD253T4G , MJD2955-1G , MJD2955G , MJD2955T4G , 8550 , MJD3055T4G , MJD31C1G , MJD31CG , MJD31CQ , MJD31CRLG , MJD31CT4-A , MJD31CT4G , MJD31T4G .
History: BDX40-7
History: BDX40-7
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sb549 | 5n50 mosfet equivalent | a1016 transistor | a1693 transistor | a933 datasheet | c535 transistor | irf3205 reemplazo | mpsu06












