MJD3055G Datasheet and Replacement
Type Designator: MJD3055G
SMD Transistor Code: J3055G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO-252
MJD3055G Transistor Equivalent Substitute - Cross-Reference Search
MJD3055G Datasheet (PDF)
mjd3055g.pdf
MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose amplifier and low speed switching 10 AMPERES applications. 60 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lea... See More ⇒
mjd2955r mjd3055.pdf
Order this document MOTOROLA by MJD2955/D SEMICONDUCTOR TECHNICAL DATA NPN MJD2955 Complementary Power PNP MJD3055 Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) POWER TRANSISTORS Straight Lead Version in Plastic S... See More ⇒
mjd2955 mjd3055.pdf
MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 APPLICATIONS 1 GENERAL PURPOSE SWITCHING AND AMPLIFIER DPAK DESCRIPTION TO-252 The MJD2955 and MJD3055 form (Suffix "T4") complementary PNP-NPN pairs. They a... See More ⇒
mjd3055.pdf
MJD3055 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, -I Suffix) D-PAK I-PAK 11 Electrically Similar to Popular MJE3055T 1.Base 2.Collector 3.Emitter DC Current Gain Specified to 10A High Current Gain - Bandwidth Product fT = 2... See More ⇒
Datasheet: MJD210T4G , MJD243G , MJD243T4G , MJD253-1G , MJD253T4G , MJD2955-1G , MJD2955G , MJD2955T4G , 8550 , MJD3055T4G , MJD31C1G , MJD31CG , MJD31CQ , MJD31CRLG , MJD31CT4-A , MJD31CT4G , MJD31T4G .
History: RN2108MFV | K2114B | BUR608 | RN1968FS | 2SC3525 | 2SC3504F | RN2111FS
Keywords - MJD3055G transistor datasheet
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History: RN2108MFV | K2114B | BUR608 | RN1968FS | 2SC3525 | 2SC3504F | RN2111FS
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