MJD44H11T4G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MJD44H11T4G
   Código: J44H11G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 85 MHz
   Capacitancia de salida (Cc): 45 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de transistor bipolar MJD44H11T4G

MJD44H11T4G Datasheet (PDF)

..1. Size:148K onsemi
mjd44h11t4g.pdf

MJD44H11,NJVMJD44H11 (NPN)MJD45H11,NJVMJD45H11 (PNP)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount Applications SILICONPOWER TRANSISTORSDesigned for general purpose power and switching such as output or8 AMPERESdriver stages in applications such as switching regulators, converters,80 VOLTS, 20 WATTSand power amplifiers.FeaturesMARKING Le

4.1. Size:569K st
mjd44h11t4a mjd45h11t4a.pdf

MJD44H11T4-AMJD45H11T4-AComplementary power transistors .Features The devices are qualified for automotive applicationTAB2 Low collector-emitter saturation voltage Fast switching speed3 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 1DPAKApplicationsTO-252 Power amplifier Switching circuitsFigure 1. Internal sche

4.2. Size:210K st
mjd44h11t4-a.pdf