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MJD6039T4G Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJD6039T4G
   Código: J6039G
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 100 pF
   Ganancia de corriente contínua (hfe): 500
   Paquete / Cubierta: TO-252
 

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MJD6039T4G datasheet

 ..1. Size:178K  onsemi
 mjd6039t4g.pdf pdf_icon

MJD6039T4G

MJD6039, NJVMJD6039T4G Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or http //onsemi.com driver stages in applications such as switching regulators, convertors, and power amplifiers. SILICON Features POWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 4 AMPERES, (No S

 0.1. Size:178K  onsemi
 njvmjd6039t4g.pdf pdf_icon

MJD6039T4G

MJD6039, NJVMJD6039T4G Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or http //onsemi.com driver stages in applications such as switching regulators, convertors, and power amplifiers. SILICON Features POWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 4 AMPERES, (No S

 7.1. Size:270K  motorola
 mjd6036r mjd6039.pdf pdf_icon

MJD6039T4G

Order this document MOTOROLA by MJD6036/D SEMICONDUCTOR TECHNICAL DATA NPN MJD6036 Complementary Darlington PNP MJD6039 Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages SILICON in applications such as switching regulators, convertors, and power amplifiers. POWER TRANSISTORS Lead Formed for Su

 7.2. Size:199K  inchange semiconductor
 mjd6039.pdf pdf_icon

MJD6039T4G

isc Silicon NPN Darlington Power Transistor MJD6039 DESCRIPTION Collector Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) High DC Current Gain- h = 500(Min)@I = 2A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

MOSTRAR MÁS

Otros transistores... MJD45H11RLG , MJD45H11T4-A , MJD45H11T4G , MJD47G , MJD47T4G , MJD50G , MJD50T4G , MJD5731T4G , BD222 , MM420 , MM421 , MMBR571L , MMBR901L , MMBR911L , MMBR920L , MMBR931L , MMBR941L .

 

 

 


 
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