MJD6039T4G Datasheet. Specs and Replacement

Type Designator: MJD6039T4G  📄📄 

SMD Transistor Code: J6039G

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 100 pF

Forward Current Transfer Ratio (hFE), MIN: 500

Noise Figure, dB: -

Package: TO-252

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MJD6039T4G datasheet

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MJD6039T4G

MJD6039, NJVMJD6039T4G Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or http //onsemi.com driver stages in applications such as switching regulators, convertors, and power amplifiers. SILICON Features POWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 4 AMPERES, (No S... See More ⇒

 0.1. Size:178K  onsemi

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MJD6039T4G

MJD6039, NJVMJD6039T4G Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or http //onsemi.com driver stages in applications such as switching regulators, convertors, and power amplifiers. SILICON Features POWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 4 AMPERES, (No S... See More ⇒

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MJD6039T4G

Order this document MOTOROLA by MJD6036/D SEMICONDUCTOR TECHNICAL DATA NPN MJD6036 Complementary Darlington PNP MJD6039 Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages SILICON in applications such as switching regulators, convertors, and power amplifiers. POWER TRANSISTORS Lead Formed for Su... See More ⇒

 7.2. Size:199K  inchange semiconductor

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MJD6039T4G

isc Silicon NPN Darlington Power Transistor MJD6039 DESCRIPTION Collector Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) High DC Current Gain- h = 500(Min)@I = 2A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒

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Detailed specifications: MJD45H11RLG, MJD45H11T4-A, MJD45H11T4G, MJD47G, MJD47T4G, MJD50G, MJD50T4G, MJD5731T4G, BD222, MM420, MM421, MMBR571L, MMBR901L, MMBR911L, MMBR920L, MMBR931L, MMBR941L

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