All Transistors. MJD6039T4G Datasheet

 

MJD6039T4G Datasheet and Replacement


   Type Designator: MJD6039T4G
   SMD Transistor Code: J6039G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 100 pF
   Forward Current Transfer Ratio (hFE), MIN: 500
   Noise Figure, dB: -
   Package: TO-252
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MJD6039T4G Datasheet (PDF)

 ..1. Size:178K  onsemi
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MJD6039T4G

MJD6039, NJVMJD6039T4GDarlington PowerTransistorsDPAK For Surface Mount ApplicationsDesigned for general purpose power and switching such as output orhttp://onsemi.comdriver stages in applications such as switching regulators, convertors,and power amplifiers.SILICON FeaturesPOWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 4 AMPERES,(No S

 0.1. Size:178K  onsemi
 njvmjd6039t4g.pdf pdf_icon

MJD6039T4G

MJD6039, NJVMJD6039T4GDarlington PowerTransistorsDPAK For Surface Mount ApplicationsDesigned for general purpose power and switching such as output orhttp://onsemi.comdriver stages in applications such as switching regulators, convertors,and power amplifiers.SILICON FeaturesPOWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 4 AMPERES,(No S

 7.1. Size:270K  motorola
 mjd6036r mjd6039.pdf pdf_icon

MJD6039T4G

Order this documentMOTOROLAby MJD6036/DSEMICONDUCTOR TECHNICAL DATANPNMJD6036Complementary Darlington PNPMJD6039Power TransistorsDPAK For Surface Mount ApplicationsDesigned for general purpose power and switching such as output or driver stagesSILICONin applications such as switching regulators, convertors, and power amplifiers.POWER TRANSISTORS Lead Formed for Su

 7.2. Size:199K  inchange semiconductor
 mjd6039.pdf pdf_icon

MJD6039T4G

isc Silicon NPN Darlington Power Transistor MJD6039DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)High DC Current Gain-: h = 500(Min)@I = 2AFE CMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for general purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)a

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