MMBT2222LT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBT2222LT1G  📄📄 

Código: M1B

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 8 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT-23

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MMBT2222LT1G datasheet

 ..1. Size:134K  onsemi
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MMBT2222LT1G

MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements BASE 2 MAXIMUM RATINGS EMITTER Rating Symbo

 3.1. Size:181K  motorola
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MMBT2222LT1G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2222LT1/D MMBT2222LT1 General Purpose Transistors * MMBT2222ALT1 COLLECTOR NPN Silicon 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol 2222 2222A Unit 2 Collector Emitter Voltage VCEO 30 40 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 60 75 Vdc SOT 23 (TO 23

 3.2. Size:126K  onsemi
 mmbt2222lt1-alt1.pdf pdf_icon

MMBT2222LT1G

MMBT2222LT1G, MMBT2222ALT1G General Purpose Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc 2 MMBT2222LT1G 30 MMBT2222ALT1G 40 EMITTER Collector-Base Voltage VCBO Vdc MMBT2222LT1G 60 3 MMBT2222ALT1G 75

 3.3. Size:144K  wej
 mmbt2222lt1.pdf pdf_icon

MMBT2222LT1G

RoHS MMBT2222LT1 SOT-23 TRANSISTOR Description SOT-23 Dimensions(Unit mm) Medium Power Amplifier. NPN Silicon Transistor. 2.3 0.2 1.3 0.2 0.5Ref. hFE RANK 0.5Ref. Features Large collector current ICmax=600mA 2 3 Low collector saturation voltage 1P enabling low voltage operation 1 Complementary pair with . Type Name 0.38Ref. MINO.1 0.01-0.10 1.EMITTER 2.BASE

MOSTRAR MÁS

Otros transistores... MMBT2222ALP4, MMBT2222ALT1G, MMBT2222ALT3G, MMBT2222ALTG, MMBT2222AM3T5G, MMBT2222ATT1G, MMBT2222AWT1G, MMBT2222LT1, 2N2222A, MMBT2222W, MMBT2369ALT1G, MMBT2369LT1G, MMBT2484LT1G, MMBT28S, MMBT2907A-G, MMBT2907AGH, MMBT2907ALT1G