All Transistors. MMBT2222LT1G Datasheet

 

MMBT2222LT1G Datasheet and Replacement


   Type Designator: MMBT2222LT1G
   SMD Transistor Code: M1B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-23
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MMBT2222LT1G Datasheet (PDF)

 ..1. Size:134K  onsemi
 mmbt2222lt1g.pdf pdf_icon

MMBT2222LT1G

MMBT2222L, MMBT2222AL,SMMBT2222ALGeneral Purpose TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique1Site and Control Change RequirementsBASE2MAXIMUM RATINGSEMITTERRating Symbo

 3.1. Size:181K  motorola
 mmbt2222lt1rev0d.pdf pdf_icon

MMBT2222LT1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2222LT1/DMMBT2222LT1General Purpose Transistors*MMBT2222ALT1COLLECTORNPN Silicon3*Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol 2222 2222A Unit2CollectorEmitter Voltage VCEO 30 40 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 60 75 VdcSOT23 (TO23

 3.2. Size:126K  onsemi
 mmbt2222lt1-alt1.pdf pdf_icon

MMBT2222LT1G

MMBT2222LT1G,MMBT2222ALT1GGeneral Purpose TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO Vdc2MMBT2222LT1G 30MMBT2222ALT1G 40 EMITTERCollector-Base Voltage VCBO VdcMMBT2222LT1G 603MMBT2222ALT1G 75

 3.3. Size:144K  wej
 mmbt2222lt1.pdf pdf_icon

MMBT2222LT1G

RoHS MMBT2222LT1SOT-23 TRANSISTORDescription SOT-23Dimensions(Unit:mm) Medium Power Amplifier. NPN Silicon Transistor.2.30.21.30.20.5Ref. hFE RANK0.5Ref.Features Large collector current:ICmax=600mA23 Low collector saturation voltage 1P enabling low voltage operation1 Complementary pair with . Type Name0.38Ref.MINO.1 0.01-0.101.EMITTER2.BASE

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Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SC1262 | 2SA1483 | BC167 | ECG2360 | BDX85B | 2SC5125 | SGSF321

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