MMBT2484LT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBT2484LT1G  📄📄 

Código: 1U

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hFE): 250

Encapsulados: SOT-23

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MMBT2484LT1G datasheet

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 mmbt2484lt1g.pdf pdf_icon

MMBT2484LT1G

MMBT2484LT1G Low Noise Transistor NPN Silicon Features www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS 1 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc 2 Collector-Base Voltage VCBO 60 Vdc EMITTER Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 100 mAdc 3 THERMAL C

 3.1. Size:191K  onsemi
 mmbt2484lt1-d.pdf pdf_icon

MMBT2484LT1G

MMBT2484LT1G Low Noise Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc 2 Emitter-Base Voltage VEBO 6.0 Vdc EMITTER Collector Current - Continuous IC 100 mAdc THERMAL CH

 4.1. Size:187K  onsemi
 mmbt2484lt3g.pdf pdf_icon

MMBT2484LT1G

MMBT2484LT1G Low Noise Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc 2 Emitter-Base Voltage VEBO 6.0 Vdc EMITTER Collector Current - Continuous IC 100 mAdc THERMAL CH

 6.1. Size:291K  motorola
 mmbt2484.pdf pdf_icon

MMBT2484LT1G

MOSTRAR MÁS

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