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MMBT2484LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBT2484LT1G
   Código: 1U
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 6 pF
   Ganancia de corriente contínua (hfe): 250
   Paquete / Cubierta: SOT-23

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MMBT2484LT1G Datasheet (PDF)

 ..1. Size:211K  onsemi
mmbt2484lt1g.pdf

MMBT2484LT1G MMBT2484LT1G

MMBT2484LT1GLow Noise TransistorNPN SiliconFeatureswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGS1BASERating Symbol Value UnitCollector-Emitter Voltage VCEO 60 Vdc2Collector-Base Voltage VCBO 60 VdcEMITTEREmitter-Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 100 mAdc3THERMAL C

 3.1. Size:191K  onsemi
mmbt2484lt1-d.pdf

MMBT2484LT1G MMBT2484LT1G

MMBT2484LT1GLow Noise TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit 1BASECollector-Emitter Voltage VCEO 60 VdcCollector-Base Voltage VCBO 60 Vdc2Emitter-Base Voltage VEBO 6.0 VdcEMITTERCollector Current - Continuous IC 100 mAdcTHERMAL CH

 4.1. Size:187K  onsemi
mmbt2484lt3g.pdf

MMBT2484LT1G MMBT2484LT1G

MMBT2484LT1GLow Noise TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit 1BASECollector-Emitter Voltage VCEO 60 VdcCollector-Base Voltage VCBO 60 Vdc2Emitter-Base Voltage VEBO 6.0 VdcEMITTERCollector Current - Continuous IC 100 mAdcTHERMAL CH

 6.1. Size:291K  motorola
mmbt2484.pdf

MMBT2484LT1G MMBT2484LT1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2484LT1/DLow Noise TransistorMMBT2484LT1COLLECTORNPN Silicon31BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 60 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 60 VdcSOT23 (TO236AB)EmitterBase Voltage VEBO 6.0 VdcCollector Current

 6.2. Size:450K  fairchild semi
mmbt2484 pn2484.pdf

MMBT2484LT1G MMBT2484LT1G

PN2484 MMBT2484CEC TO-92SOT-23 BBEMark: 1UNPN General Purpose AmplifierThis device is designed for low noise, high gain, general purposeamplifier applications at collector currents from 1 to 50 mA.Sourced from Process 07. See 2N5088 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Volt

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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