All Transistors. MMBT2484LT1G Datasheet

 

MMBT2484LT1G Datasheet, Equivalent, Cross Reference Search


   Type Designator: MMBT2484LT1G
   SMD Transistor Code: 1U
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: SOT-23

 MMBT2484LT1G Transistor Equivalent Substitute - Cross-Reference Search

   

MMBT2484LT1G Datasheet (PDF)

 ..1. Size:211K  onsemi
mmbt2484lt1g.pdf

MMBT2484LT1G
MMBT2484LT1G

MMBT2484LT1GLow Noise TransistorNPN SiliconFeatureswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGS1BASERating Symbol Value UnitCollector-Emitter Voltage VCEO 60 Vdc2Collector-Base Voltage VCBO 60 VdcEMITTEREmitter-Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 100 mAdc3THERMAL C

 3.1. Size:191K  onsemi
mmbt2484lt1-d.pdf

MMBT2484LT1G
MMBT2484LT1G

MMBT2484LT1GLow Noise TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit 1BASECollector-Emitter Voltage VCEO 60 VdcCollector-Base Voltage VCBO 60 Vdc2Emitter-Base Voltage VEBO 6.0 VdcEMITTERCollector Current - Continuous IC 100 mAdcTHERMAL CH

 4.1. Size:187K  onsemi
mmbt2484lt3g.pdf

MMBT2484LT1G
MMBT2484LT1G

MMBT2484LT1GLow Noise TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit 1BASECollector-Emitter Voltage VCEO 60 VdcCollector-Base Voltage VCBO 60 Vdc2Emitter-Base Voltage VEBO 6.0 VdcEMITTERCollector Current - Continuous IC 100 mAdcTHERMAL CH

 6.1. Size:291K  motorola
mmbt2484.pdf

MMBT2484LT1G
MMBT2484LT1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2484LT1/DLow Noise TransistorMMBT2484LT1COLLECTORNPN Silicon31BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 60 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 60 VdcSOT23 (TO236AB)EmitterBase Voltage VEBO 6.0 VdcCollector Current

 6.2. Size:450K  fairchild semi
mmbt2484 pn2484.pdf

MMBT2484LT1G
MMBT2484LT1G

PN2484 MMBT2484CEC TO-92SOT-23 BBEMark: 1UNPN General Purpose AmplifierThis device is designed for low noise, high gain, general purposeamplifier applications at collector currents from 1 to 50 mA.Sourced from Process 07. See 2N5088 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Volt

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 2SC3945 | 2N960 | 2SC3916

 

 
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