MMBT2907ALT3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT2907ALT3G
Código: 2F
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de transistor bipolar MMBT2907ALT3G
MMBT2907ALT3G Datasheet (PDF)
mmbt2907alt3g.pdf
MMBT2907AL,SMMBT2907ALGeneral Purpose TransistorsPNP Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant3 S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified and1PPAP CapableBASEMAXIMUM RATINGS2EMITTERRating Symbol Value Unit
mmbt2907alt1-d.pdf
MMBT2907ALT1GGeneral Purpose TransistorsPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -60 VdcCollector-Base Voltage VCBO -60 Vdc2EMITTEREmitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC -600 mAdc
mmbt2907alt1g.pdf
MMBT2907AL,SMMBT2907ALGeneral Purpose TransistorsPNP Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant3 S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified and1PPAP CapableBASEMAXIMUM RATINGS2EMITTERRating Symbol Value Unit
mmbt2907altg.pdf
MMBT2907ALTGPNP Silicon General Purpose TransistorFeaturesPackage outline Pb-Free Package May be Available. The G-Suffix Denotes aPb-Free Lead Finish3Maximum Ratings1Rating Symbol 2907A Unit2Collector-Emitter Voltage VCEO -60 VdcCollector-Base Voltage VCBO -60 VdcSOT23Emitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC -600 mAdc3COLLECTOR
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SA1179N | 2SA1206
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050