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MMBT3904WG . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBT3904WG
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 300 MHz
   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT-323

 Búsqueda de reemplazo de transistor bipolar MMBT3904WG

 

MMBT3904WG Datasheet (PDF)

 ..1. Size:118K  zovie
mmbt3904wg.pdf

MMBT3904WG
MMBT3904WG

Zowie Technology CorporationGeneral Purpose TransistorNPN SiliconLead free productCOLLECTOR33BASE11MMBT3904WG22SOT-323EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcTHERMAL CHARACTERISTICSCharacteristic Symbol

 0.1. Size:116K  zovie
mmbt3904wgh.pdf

MMBT3904WG
MMBT3904WG

Zowie Technology CorporationGeneral Purpose TransistorNPN SiliconLead free productHalogen-free typeCOLLECTOR33BASE11MMBT3904WGH22SOT-323EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcTHERMAL CHARACTERISTICSCh

 5.1. Size:423K  motorola
mmbt3904w mmbt3906wt1 mmbt3904 06.pdf

MMBT3904WG
MMBT3904WG

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAMMBT3904WT1/DGeneral Purpose TransistorsNPNNPN and PNP SiliconMMBT3904WT1PNPThese transistors are designed for general purpose amplifier applications. They arehoused in the SOT323/SC70 which is designed for low power surface mountMMBT3906WT1applications.MAXIMUM RATINGSRating Symbol Value UnitGENERAL PURPO

 5.2. Size:297K  motorola
mmbt3904wt1 mmbt3906wt1.pdf

MMBT3904WG
MMBT3904WG

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAMMBT3904WT1/DGeneral Purpose TransistorsNPNNPN and PNP SiliconMMBT3904WT1PNPThese transistors are designed for general purpose amplifier applications. They arehoused in the SOT323/SC70 which is designed for low power surface mountMMBT3906WT1applications.MAXIMUM RATINGSRating Symbol Value UnitGENERAL PURPO

 5.3. Size:128K  onsemi
mmbt3904wt1g smmbt3904wt1g mmbt3906wt1g smmbt3906wt1g.pdf

MMBT3904WG
MMBT3904WG

MMBT3904WT1G, NPN,SMMBT3904WT1G, NPN,MMBT3906WT1G, PNP,SMMBT3906WT1G, PNPGeneral Purposewww.onsemi.comTransistorsNPN and PNP SiliconCOLLECTOR3These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-323/SC-70 package which1is designed for low power surface mount applications.BASEFeatures2 S Prefix for Automotive an

 5.4. Size:160K  onsemi
mmbt3904wt1 mmbt3906wt1.pdf

MMBT3904WG
MMBT3904WG

MMBT3904WT1, NPNMMBT3906WT1, PNPGeneral PurposeTransistorsNPN and PNP Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierCOLLECTORapplications. They are housed in the SOT-323/SC-70 package which3is designed for low power surface mount applications.Features1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASEComplian

 5.5. Size:1411K  onsemi
mmbt3904wt1g mmbt3906wt1g.pdf

MMBT3904WG
MMBT3904WG

MMBT3904WT1, NPN,SMMBT3904WT1, NPN,MMBT3906WT1, PNPGeneral PurposeTransistorshttp://onsemi.comNPN and PNP SiliconCOLLECTORThese transistors are designed for general purpose amplifier3applications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.1BASEFeatures AEC-Q101 Qualified and PPAP Capable2 S Pref

 5.6. Size:396K  secos
mmbt3904w.pdf

MMBT3904WG
MMBT3904WG

MMBT3904WNPN SiliconElektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeFEATURESSOT-323(SC-70) Epitaxial Planar Die ConstructionDim Min MaxA Complementary PNP Type AvailableLA 1.800 2.200(MMBT3906W)B 1.150 1.3503 Ideal for Medium Power Amplification andS C 0.800 1.000Top ViewBSwitching

 5.7. Size:373K  wietron
mmbt3904w.pdf

MMBT3904WG
MMBT3904WG

MMBT3904WCOLLECTOR3General Purpose Transistor3NPN Silicon1BASE122EMITTERSOT-323(SC-70)Maximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V 40 VdcCEOCollector-Base Voltage VCBO 60 VdcEmitter-Base VOltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcThermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipation TA=

 5.8. Size:1116K  kexin
mmbt3904w.pdf

MMBT3904WG
MMBT3904WG

SMD Type TransistorsNPN TransistorsMMBT3904W Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=40V Complementary to MMBT3906W1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Colle

 5.9. Size:200K  panjit
mmbt3904w.pdf

MMBT3904WG
MMBT3904WG

MMBT3904WNPN GENERAL PURPOSE SWITCHING TRANSISTORUnitinch(mm)SOT-323150 mWattVOLTAGE 40 Volt POWERFEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V0.087(2.20) Collector current IC = 200mA0.070(1.80) Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard 0.054(1.35)0.045(1.15)MEC

 5.10. Size:688K  slkor
mmbt3904w.pdf

MMBT3904WG
MMBT3904WG

MMBT3904WNPN Silicon Epitaxial Planar Transistorfor switching and amplifier applicationsOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mA Total Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C OStorage Temperature Range

 5.11. Size:5582K  cn twgmc
mmbt3904w.pdf

MMBT3904WG
MMBT3904WG

MMBT3904WMMBT3904WMMBT3904WMMBT3904WTRANSISTOR(NPN)MMBT39 0 4Wfor switching and amplifier applicationsSOT323 31. BASE 12. EMITTER 23. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mA Total Power

 5.12. Size:1275K  cn doeshare
mmbt3904w.pdf

MMBT3904WG
MMBT3904WG

MMBT3904W MMBT3904W SOT-323 Silicon General Purpose Transistor (NPN) General description SOT-323 Silicon General Purpose Transistor (NPN) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight: approx. 0.001g Absolute Maximum Ratings (TA = 25C unless otherwise noted) Symbol Parameter Value Units VCBO Collector

 5.13. Size:1116K  cn cbi
mmbt3904w.pdf

MMBT3904WG
MMBT3904WG

MMBT3904W NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications Marking Code: 1EOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mA Total Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C OStor

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SA1384 | 2SA1463

 

 
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History: 2SA1384 | 2SA1463

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