MMBT3904WG datasheet, аналоги, основные параметры
Наименование производителя: MMBT3904WG 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.225 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 300 MHz
Ёмкость коллекторного перехода (Cc): 4 pf
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: SOT-323
Аналоги (замена) для MMBT3904WG
- подборⓘ биполярного транзистора по параметрам
MMBT3904WG даташит
..1. Size:118K zovie
mmbt3904wg.pdf 
Zowie Technology Corporation General Purpose Transistor NPN Silicon Lead free product COLLECTOR 3 3 BASE 1 1 MMBT3904WG 2 2 SOT-323 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol
0.1. Size:116K zovie
mmbt3904wgh.pdf 
Zowie Technology Corporation General Purpose Transistor NPN Silicon Lead free product Halogen-free type COLLECTOR 3 3 BASE 1 1 MMBT3904WGH 2 2 SOT-323 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc THERMAL CHARACTERISTICS Ch
5.1. Size:423K motorola
mmbt3904w mmbt3906wt1 mmbt3904 06.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA MMBT3904WT1/D General Purpose Transistors NPN NPN and PNP Silicon MMBT3904WT1 PNP These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/SC 70 which is designed for low power surface mount MMBT3906WT1 applications. MAXIMUM RATINGS Rating Symbol Value Unit GENERAL PURPO
5.2. Size:297K motorola
mmbt3904wt1 mmbt3906wt1.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA MMBT3904WT1/D General Purpose Transistors NPN NPN and PNP Silicon MMBT3904WT1 PNP These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/SC 70 which is designed for low power surface mount MMBT3906WT1 applications. MAXIMUM RATINGS Rating Symbol Value Unit GENERAL PURPO
5.3. Size:128K onsemi
mmbt3904wt1g smmbt3904wt1g mmbt3906wt1g smmbt3906wt1g.pdf 
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP General Purpose www.onsemi.com Transistors NPN and PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 package which 1 is designed for low power surface mount applications. BASE Features 2 S Prefix for Automotive an
5.4. Size:160K onsemi
mmbt3904wt1 mmbt3906wt1.pdf 
MMBT3904WT1, NPN MMBT3906WT1, PNP General Purpose Transistors NPN and PNP Silicon http //onsemi.com These transistors are designed for general purpose amplifier COLLECTOR applications. They are housed in the SOT-323/SC-70 package which 3 is designed for low power surface mount applications. Features 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS BASE Complian
5.5. Size:1411K onsemi
mmbt3904wt1g mmbt3906wt1g.pdf 
MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP General Purpose Transistors http //onsemi.com NPN and PNP Silicon COLLECTOR These transistors are designed for general purpose amplifier 3 applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. 1 BASE Features AEC-Q101 Qualified and PPAP Capable 2 S Pref
5.6. Size:396K secos
mmbt3904w.pdf 
MMBT3904W NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-323(SC-70) Epitaxial Planar Die Construction Dim Min Max A Complementary PNP Type Available L A 1.800 2.200 (MMBT3906W) B 1.150 1.350 3 Ideal for Medium Power Amplification and S C 0.800 1.000 Top View B Switching
5.7. Size:373K wietron
mmbt3904w.pdf 
MMBT3904W COLLECTOR 3 General Purpose Transistor 3 NPN Silicon 1 BASE 1 2 2 EMITTER SOT-323(SC-70) Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V 40 Vdc CEO Collector-Base Voltage VCBO 60 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation TA=
5.8. Size:1116K kexin
mmbt3904w.pdf 
SMD Type Transistors NPN Transistors MMBT3904W Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=40V Complementary to MMBT3906W 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Colle
5.9. Size:200K panjit
mmbt3904w.pdf 
MMBT3904W NPN GENERAL PURPOSE SWITCHING TRANSISTOR Unit inch(mm) SOT-323 150 mWatt VOLTAGE 40 Volt POWER FEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V 0.087(2.20) Collector current IC = 200mA 0.070(1.80) Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard 0.054(1.35) 0.045(1.15) MEC
5.10. Size:688K slkor
mmbt3904w.pdf 
MMBT3904W NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Total Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O Storage Temperature Range
5.11. Size:5582K cn twgmc
mmbt3904w.pdf 
MMBT3904W MMBT3904W MMBT3904W MMBT3904W TRANSISTOR(NPN) MMBT39 0 4W for switching and amplifier applications SOT 323 3 1. BASE 1 2. EMITTER 2 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Total Power
5.12. Size:1275K cn doeshare
mmbt3904w.pdf 
MMBT3904W MMBT3904W SOT-323 Silicon General Purpose Transistor (NPN) General description SOT-323 Silicon General Purpose Transistor (NPN) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight approx. 0.001g Absolute Maximum Ratings (TA = 25 C unless otherwise noted) Symbol Parameter Value Units VCBO Collector
5.13. Size:1116K cn cbi
mmbt3904w.pdf 
MMBT3904W NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications Marking Code 1E O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Total Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O Stor
Другие транзисторы: MMBT3904GH, MMBT3904-HF, MMBT3904LT1G, MMBT3904LT3G, MMBT3904LTG, MMBT3904M, MMBT3904SL, MMBT3904TT1G, SS8050, MMBT3904WGH, MMBT3904WT1G, MMBT3904ZW, MMBT3906FA, MMBT3906FZ, MMBT3906-G, MMBT3906-HF, MMBT3906LT1G
