MMBT4403WT1G Todos los transistores

 

MMBT4403WT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBT4403WT1G
   Código: 2T
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 8.5 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT-323

 Búsqueda de reemplazo de transistor bipolar MMBT4403WT1G

 

MMBT4403WT1G Datasheet (PDF)

 ..1. Size:144K  onsemi
mmbt4403wt1g.pdf

MMBT4403WT1G MMBT4403WT1G

MMBT4403WT1GSwitching TransistorPNP SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model; 4 kV,Machine Model; 400 VCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3Compliant1BASEMAXIMUM RATINGS 2EMITTERRating Symbol Value UnitCollector-Emitter Voltage VCEO -40 Vdc3Collector-Base Voltage

 3.1. Size:178K  onsemi
mmbt4403wt1.pdf

MMBT4403WT1G MMBT4403WT1G

MMBT4403WT1GSwitching TransistorPNP SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model; 4 kV,Machine Model; 400 VCOLLECTOR These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS3Compliant1BASEMAXIMUM RATINGS 2EMITTERRating Symbol Value UnitCollector -- Emitter Voltage VCEO --40 Vdc3Collector -- Base

 3.2. Size:503K  willas
mmbt4403wt1.pdf

MMBT4403WT1G MMBT4403WT1G

FM120-MWILLASTHRUMMBT4403WT1General Purpose TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures BatcPNP etteh process design, excellent power dissipation offersSilicon b r reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to

 5.1. Size:295K  secos
mmbt4403w.pdf

MMBT4403WT1G MMBT4403WT1G

MMBT4403WPNP SiliconElektronische BauelementeSwitching TransistorRoHS Compliant ProductA SOT-323LDim Min MaxCOLLECTORA 1.800 2.2003STop ViewBB 1.150 1.3503C 0.800 1.0001BASED 0.300 0.400V G1G 1.200 1.40022H 0.000 0.100CEMITTERJ 0.100 0.250HJDKK 0.350 0.500L 0.590 0.720S 2.000 2.400MAXIMUM RATINGSV 0.280 0.420Rating Symb

 5.2. Size:1870K  kexin
mmbt4403w.pdf

MMBT4403WT1G MMBT4403WT1G

SMD Type orSMD Type TransistICsPNP Transistors MMBT4403W (KMBT4403W)FeaturesSwitching transistors. Collector Current Capability IC=-600mA Collector Emitter Voltage VCEO=-40V1 Emitter2 Base3 CollectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-emitter voltage VCEO -40 VCollector-base voltage VCBO -40 VEmitter-base voltage VEBO -5 V

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top

 


MMBT4403WT1G
  MMBT4403WT1G
  MMBT4403WT1G
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D

 

 

 
Back to Top