MMBT5089LT1G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT5089LT1G
Código: 1R
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 25
V
Tensión emisor-base (Veb): 4.5
V
Corriente del colector DC máxima (Ic): 0.05
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50
MHz
Capacitancia de salida (Cc): 4
pF
Ganancia de corriente contínua (hfe): 400
Paquete / Cubierta:
SOT-23
Búsqueda de reemplazo de transistor bipolar MMBT5089LT1G
MMBT5089LT1G
Datasheet (PDF)
..1. Size:125K onsemi
mmbt5089lt1g.pdf 
MMBT5088LT1G,SMMBT5088LT1G,MMBT5089LT1G,SMMBT5089LT1GLow Noise Transistorshttp://onsemi.comNPN SiliconFeatures AEC-Q101 Qualified and PPAP CapableSOT-23 (TO-236) S Prefix for Automotive and Other Applications Requiring UniqueCASE 318Site and Control Change RequirementsSTYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant
..2. Size:192K onsemi
mmbt5088lt1 mmbt5089lt1g.pdf
MMBT5088LT1G,MMBT5089LT1GLow Noise TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31MAXIMUM RATINGSBASERating Symbol Value Unit2Collector-Emitter Voltage VCEO VdcEMITTERMMBT5088 30MMBT5089 25Collector-Base Voltage VCBO Vdc3SOT-23 (TO-236)MMBT5088 35MMBT5089 30 CASE 31
5.1. Size:183K onsemi
mmbt5088l mmbt5089l.pdf
MMBT5088L, MMBT5089LLow Noise TransistorsNPN SiliconFeatures S and NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantSOT-23 (TO-236)CASE 318MAXIMUM RATINGSSTYLE 6Rating Symbol Value UnitCOL
6.1. Size:298K motorola
mmbt5088 mmbt5089.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT5088LT1/DMMBT5088LT1Low Noise Transistors*MMBT5089LT1COLLECTORNPN Silicon3*Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol 5088LT1 5089LT1 Unit2CollectorEmitter Voltage VCEO 30 25 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 35 30 VdcSOT23 (TO236A
6.2. Size:97K fairchild semi
2n5088 mmbt5088 2n5089 mmbt5089.pdf
2N5088 MMBT50882N5089 MMBT5089CEC TO-92BBSOT-23EMark: 1Q / 1RNPN General Purpose AmplifierThis device is designed for low noise, high gain, general purposeamplifier applications at collector currents from 1A to 50 mA.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 2N5088 30 V2N5089 25 VVCBO
6.3. Size:2148K kexin
mmbt5089.pdf
SMD Type TransistorsNPN TransistorsMMBT5089 (KMBT5089)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=25V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage V
6.4. Size:352K cn shikues
mmbt5089.pdf
NPN General Purpose Amplifier For low noise, high gain, general purpose amplifierFor low noise, high gain, general purpose amplifier applications at collector currents from 1A to 50mA. applications at collector currents from 1A to 50mA. 1: Base 2: Emitter 3: Collector1: Base 2: Emitter 3: Collector Marking:Marking: 1RM SOT-23 Plastic Package23 Plastic Package Absolu
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