MMBT5089LT1G datasheet и подбор замены

 ..1. Size:125K  onsemi
 mmbt5089lt1g.pdf 

MMBT5088LT1G, SMMBT5088LT1G, MMBT5089LT1G, SMMBT5089LT1G Low Noise Transistors http //onsemi.com NPN Silicon Features AEC-Q101 Qualified and PPAP Capable SOT-23 (TO-236) S Prefix for Automotive and Other Applications Requiring Unique CASE 318 Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant

 ..2. Size:192K  onsemi
 mmbt5088lt1 mmbt5089lt1g.pdf 

MMBT5088LT1G, MMBT5089LT1G Low Noise Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit 2 Collector-Emitter Voltage VCEO Vdc EMITTER MMBT5088 30 MMBT5089 25 Collector-Base Voltage VCBO Vdc 3 SOT-23 (TO-236) MMBT5088 35 MMBT5089 30 CASE 31

 5.1. Size:183K  onsemi
 mmbt5088l mmbt5089l.pdf 

MMBT5088L, MMBT5089L Low Noise Transistors NPN Silicon Features S and NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SOT-23 (TO-236) CASE 318 MAXIMUM RATINGS STYLE 6 Rating Symbol Value Unit COL

 6.1. Size:298K  motorola
 mmbt5088 mmbt5089.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT5088LT1/D MMBT5088LT1 Low Noise Transistors * MMBT5089LT1 COLLECTOR NPN Silicon 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol 5088LT1 5089LT1 Unit 2 Collector Emitter Voltage VCEO 30 25 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 35 30 Vdc SOT 23 (TO 236A

 6.2. Size:97K  fairchild semi
 2n5088 mmbt5088 2n5089 mmbt5089.pdf 

2N5088 MMBT5088 2N5089 MMBT5089 C E C TO-92 B B SOT-23 E Mark 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 A to 50 mA. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 2N5088 30 V 2N5089 25 V VCBO

 6.3. Size:2148K  kexin
 mmbt5089.pdf 

SMD Type Transistors NPN Transistors MMBT5089 (KMBT5089) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=25V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage V

 6.4. Size:352K  cn shikues
 mmbt5089.pdf 

NPN General Purpose Amplifier For low noise, high gain, general purpose amplifier For low noise, high gain, general purpose amplifier applications at collector currents from 1 A to 50mA. applications at collector currents from 1 A to 50mA. 1 Base 2 Emitter 3 Collector 1 Base 2 Emitter 3 Collector Marking Marking 1RM SOT-23 Plastic Package 23 Plastic Package Absolu