MMBT5401LT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBT5401LT1G  📄📄 

Código: 2L

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 160 V

Tensión colector-emisor (Vce): 150 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hFE): 60

Encapsulados: SOT-23

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MMBT5401LT1G datasheet

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MMBT5401LT1G

MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G High Voltage Transistor PNP Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT-23 (TO-236) CASE 318 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS STYLE 6 Compliant* COLLECTOR MAXIMUM RAT

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MMBT5401LT1G

MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G High Voltage Transistor PNP Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT-23 (TO-236) CASE 318 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS STYLE 6 Compliant COLLECTOR MAXIMUM RATI

 3.1. Size:115K  onsemi
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MMBT5401LT1G

MMBT5401LT1G High Voltage Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO -150 Vdc BASE Collector-Base Voltage VCBO -160 Vdc 2 Emitter-Base Voltage VEBO -5.0 Vdc EMITTER Collector Current - Continuous IC -500 mAdc S

 3.2. Size:325K  willas
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MMBT5401LT1G

FM120-M WILLAS MMBT5401LT1 THRU High Voltage Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H FEATURE Low profile surface mounted application in order to o

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