MMBT5401WT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBT5401WT1G  📄📄 

Código: 4W

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.4 W

Tensión colector-base (Vcb): 160 V

Tensión colector-emisor (Vce): 150 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hFE): 60

Encapsulados: SOT-323

  📄📄 Copiar 

 Búsqueda de reemplazo de MMBT5401WT1G

- Selecciónⓘ de transistores por parámetros

 

MMBT5401WT1G datasheet

 ..1. Size:76K  onsemi
 mmbt5401wt1g.pdf pdf_icon

MMBT5401WT1G

MMBT5401W High Voltage Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector-Emitter Vo

 0.1. Size:76K  onsemi
 nsvmmbt5401wt1g.pdf pdf_icon

MMBT5401WT1G

MMBT5401W High Voltage Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector-Emitter Vo

 5.1. Size:73K  onsemi
 mmbt5401w.pdf pdf_icon

MMBT5401WT1G

MMBT5401W High Voltage Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector-Emitter Vo

 5.2. Size:226K  secos
 mmbt5401w.pdf pdf_icon

MMBT5401WT1G

MMBT5401W PNP Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of -C specifies halogen & lead-free FEATURE A L Ideal for Medium Power Amplification and Switching 3 3 Also Available in Lead Free Version Top View C B Complementary to MMBT5551W 1 1 2 2 K E Collector 3 D H J F G MARKING K4M 1

MOSTRAR MÁS

Otros transistores... MMBT5210, MMBT5343-G, MMBT5343-L, MMBT5343-O, MMBT5343-Y, MMBT5401-G, MMBT5401GH, MMBT5401LT1G, A42, MMBT5550GH, MMBT5550LT1G, MMBT5551GH, MMBT5551LT1G, MMBT5551M3, MMBT589LT1G, MMBT5962, MMBT6427LT1G