MMBT5550LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT5550LT1G
Código: M1F
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 140 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de transistor bipolar MMBT5550LT1G
MMBT5550LT1G Datasheet (PDF)
mmbt5550lt1g.pdf
MMBT5550L, MMBT5551L,SMMBT5551LHigh Voltage TransistorsNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP CapableCOLLECTOR S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1BASECompliant2MAXIMUM RATINGSEMITTERRating Symbol Va
mmbt5550lt1 mmbt5551lt1.pdf
MMBT5550LT1G,MMBT5551LT1GHigh Voltage TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant3MAXIMUM RATINGS 1BASERating Symbol Value UnitCollector-Emitter Voltage VCEO Vdc2MMBT5550 140EMITTERMMBT5551160Collector-Base Voltage VCBO VdcMARKINGMMBT5550 1603DIAGRAMMMBT555118
mmbt5550l mmbt5551l.pdf
MMBT5550L, MMBT5551LHigh Voltage TransistorsNPN SiliconFeatures S Prefix for Automotive and Other Applications Requiring Uniquewww.onsemi.comSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGSRating Symbol Value Unit2EMITTERCollector
mmbt5550 mmbt5551.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT5550LT1/DMMBT5550LT1High Voltage Transistors*MMBT5551LT1COLLECTORNPN Silicon3*Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 140 VdcCollectorBase Voltage VCBO 160 VdcCASE 31808, STYLE 6SOT23 (TO236AB)Emitter
mmbt5550.pdf
August 2005MMBT5550NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.32SOT-231Marking: 1F1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 140 VVCBO Collector-Base Voltage 160 VVEBO
mmbt5550.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors MMBT5550 TRANSISTOR (NPN) SOT23 FEATURES High Voltage Transistor MARKING:M1F MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 160 V CBO3. COLLECTOR V Collector-Emitter Voltage 140 V CEOV
mmbt5550gh mmbt5551gh.pdf
Zowie Technology CorporationHigh Voltage TransistorsLead free productHalogen-free typeFEATURE We declare that the material of product compliance with RoHS requirements.3COLLECTOR3MMBT5550GH11BASEMMBT5551GH 22SOT-23EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage V CEO 140 VdcCollectorBase Voltage V CBO 160 VdcEmitterB
mmbt5550.pdf
MMBT5550TRANSISTOR(NPN) SOT23 FEATURES High Voltage Transistor MARKING:M1F MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 160 V CBO 3. COLLECTOR V Collector-Emitter Voltage 140 V CEOV Emitter-Base Voltage 6 V EBOI Collector Current 600 mA CPC Collector Power Dissipation 225 mW
mmbt5550-51.pdf
MMBT5550MMBT5551High Voltage NPN TransistorsCOLLECTOR3311BASE22SOT-23EMITTERMMBT5550 MMBT5551VCEO 140 160160 1806.06005563002.4417MMBT5550 = M1F ; MMBT5551 = G1(TA=25 C unless otherwise noted)(3)MMBT5550 1401.0 ,MMBT5551 160MMBT5550 160-100 ,180MMBT55516.010 ,WEITRONhttp://www.weitron.com.twMMBT5550MMBT5551ELECTRICAL
mmbt5550.pdf
SMD Type TransistorsNPN TransistorsMMBT5550 (KMBT5550)SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=0.6A Collector Emitter Voltage VCEO=140V1 2 High Voltage Transistor+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
mmbt5550 mmbt5551.pdf
MMBT5550 / MMBT5551High Voltage TransistorsNPN SiliconPackage outlineFeatures High collector-emitterbreakdien voltage.SOT-23(BV = 140V~ 160V@I =1mA)CEO C This device is designed for general purpose high voltageamplifiers and gas discharge display driving. Epitaxial planar die construction. Lead-free parts for green partner, exceeds environmentalstandards of
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