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MMBT5550LT1G Specs and Replacement


   Type Designator: MMBT5550LT1G
   SMD Transistor Code: M1F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 140 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT-23

 MMBT5550LT1G Transistor Equivalent Substitute - Cross-Reference Search

   

MMBT5550LT1G detailed specifications

 ..1. Size:172K  onsemi
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MMBT5550LT1G

MMBT5550L, MMBT5551L, SMMBT5551L High Voltage Transistors NPN Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable COLLECTOR S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 MAXIMUM RATINGS EMITTER Rating Symbol Va... See More ⇒

 3.1. Size:121K  onsemi
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MMBT5550LT1G

MMBT5550LT1G, MMBT5551LT1G High Voltage Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 MAXIMUM RATINGS 1 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc 2 MMBT5550 140 EMITTER MMBT5551 160 Collector-Base Voltage VCBO Vdc MARKING MMBT5550 160 3 DIAGRAM MMBT5551 18... See More ⇒

 5.1. Size:167K  onsemi
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MMBT5550LT1G

MMBT5550L, MMBT5551L High Voltage Transistors NPN Silicon Features S Prefix for Automotive and Other Applications Requiring Unique www.onsemi.com Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector... See More ⇒

 6.1. Size:199K  motorola
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MMBT5550LT1G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT5550LT1/D MMBT5550LT1 High Voltage Transistors * MMBT5551LT1 COLLECTOR NPN Silicon 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCEO 140 Vdc Collector Base Voltage VCBO 160 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Emitter... See More ⇒

Detailed specifications: MMBT5343-L , MMBT5343-O , MMBT5343-Y , MMBT5401-G , MMBT5401GH , MMBT5401LT1G , MMBT5401WT1G , MMBT5550GH , BD333 , MMBT5551GH , MMBT5551LT1G , MMBT5551M3 , MMBT589LT1G , MMBT5962 , MMBT6427LT1G , MMBT6428LT1 , MMBT6428LT1G .

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