MMBT6429LT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBT6429LT1G  📄📄 

Código: M1L

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 55 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hFE): 500

Encapsulados: SOT-23

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MMBT6429LT1G datasheet

 ..1. Size:125K  onsemi
 mmbt6429lt1g.pdf pdf_icon

MMBT6429LT1G

MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G Amplifier Transistors NPN Silicon http //onsemi.com Features COLLECTOR 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 2 EMITTER 3 SOT-23 (TO-236) MAXIM

 ..2. Size:82K  onsemi
 mmbt6428lt1g mmbt6429lt1g nsvmmbt6429lt1g.pdf pdf_icon

MMBT6429LT1G

MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G Amplifier Transistors NPN Silicon www.onsemi.com Features COLLECTOR 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 2 EMITTER 3 SOT-23 (TO-236) MAXIMUM

 0.1. Size:125K  onsemi
 nsvmmbt6429lt1g.pdf pdf_icon

MMBT6429LT1G

MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G Amplifier Transistors NPN Silicon http //onsemi.com Features COLLECTOR 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 2 EMITTER 3 SOT-23 (TO-236) MAXIM

 3.1. Size:194K  onsemi
 mmbt6428lt1 mmbt6429lt1.pdf pdf_icon

MMBT6429LT1G

MMBT6428LT1G, MMBT6429LT1G Amplifier Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol 6428LT1 6429LT1 Unit Collector-Emitter Voltage VCEO 50 45 Vdc Collector-Base Voltage VCBO 60 55 Vdc 3 SOT-23 (TO-236) Emitter-Base Voltage VEBO 6.0 Vdc CA

MOSTRAR MÁS

Otros transistores... MMBT5551GH, MMBT5551LT1G, MMBT5551M3, MMBT589LT1G, MMBT5962, MMBT6427LT1G, MMBT6428LT1, MMBT6428LT1G, 2N5551, MMBT6515, MMBT6517LT1G, MMBT6520LT1G, MMBT6521LT1G, MMBT720, MMBT8050, MMBT8050D, MMBT8050LT1