MMBT6517LT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBT6517LT1G  📄📄 

Código: 1Z

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 350 V

Tensión colector-emisor (Vce): 350 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 40 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: SOT-23

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MMBT6517LT1G datasheet

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 mmbt6517lt1g.pdf pdf_icon

MMBT6517LT1G

MMBT6517L, NSVMMBT6517L High Voltage Transistor NPN Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER C

 0.1. Size:124K  onsemi
 nsvmmbt6517lt1g.pdf pdf_icon

MMBT6517LT1G

MMBT6517L, NSVMMBT6517L High Voltage Transistor NPN Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER C

 3.1. Size:156K  onsemi
 mmbt6517lt1.pdf pdf_icon

MMBT6517LT1G

MMBT6517LT1G High Voltage Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector - Emitter Voltage VCEO 350 V Collector -Base Voltage VCBO 350 V 3 Emitter - Base Voltage VEBO 5.0 V Base Current IB 25 mA 1 Collector Current - C

 4.1. Size:124K  onsemi
 mmbt6517lt3g.pdf pdf_icon

MMBT6517LT1G

MMBT6517L, NSVMMBT6517L High Voltage Transistor NPN Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER C

MOSTRAR MÁS

Otros transistores... MMBT5551M3, MMBT589LT1G, MMBT5962, MMBT6427LT1G, MMBT6428LT1, MMBT6428LT1G, MMBT6429LT1G, MMBT6515, C1815, MMBT6520LT1G, MMBT6521LT1G, MMBT720, MMBT8050, MMBT8050D, MMBT8050LT1, MMBT8099LT1G, MMBT8550