MMBT6517LT1G Todos los transistores

 

MMBT6517LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBT6517LT1G
   Código: 1Z
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 350 V
   Tensión colector-emisor (Vce): 350 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 40 MHz
   Capacitancia de salida (Cc): 6 pF
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: SOT-23
 

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MMBT6517LT1G Datasheet (PDF)

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MMBT6517LT1G

MMBT6517L,NSVMMBT6517LHigh Voltage TransistorNPN Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERC

 0.1. Size:124K  onsemi
 nsvmmbt6517lt1g.pdf pdf_icon

MMBT6517LT1G

MMBT6517L,NSVMMBT6517LHigh Voltage TransistorNPN Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERC

 3.1. Size:156K  onsemi
 mmbt6517lt1.pdf pdf_icon

MMBT6517LT1G

MMBT6517LT1GHigh Voltage TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR31BASEMAXIMUM RATINGSRating Symbol Value Unit 2EMITTERCollector - Emitter Voltage VCEO 350 VCollector -Base Voltage VCBO 350 V3Emitter - Base Voltage VEBO 5.0 VBase Current IB 25 mA1Collector Current - C

 4.1. Size:124K  onsemi
 mmbt6517lt3g.pdf pdf_icon

MMBT6517LT1G

MMBT6517L,NSVMMBT6517LHigh Voltage TransistorNPN Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERC

MOSTRAR MÁS

Otros transistores... MMBT5551M3 , MMBT589LT1G , MMBT5962 , MMBT6427LT1G , MMBT6428LT1 , MMBT6428LT1G , MMBT6429LT1G , MMBT6515 , 2N2222 , MMBT6520LT1G , MMBT6521LT1G , MMBT720 , MMBT8050 , MMBT8050D , MMBT8050LT1 , MMBT8099LT1G , MMBT8550 .

History: L8550SLT3G | MJE345 | T2019 | MMBT3906FW | T1475 | MMBTH10-4LT1G | T1858

 

 
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