MMBT6520LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MMBT6520L, NSVMMBT6520L High Voltage Transistor PNP Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C

MMBT6520L, NSVMMBT6520L High Voltage Transistor PNP Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C

MMBT6520LT1G High Voltage Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO -350 Vdc Collector-Base Voltage VCBO -350 Vdc 2 EMITTER Emitter-Base Voltage VEBO -5.0 Vdc Base Current IB -250 mA Collector Current -

MMBT6520L, NSVMMBT6520L High Voltage Transistor PNP Silicon www.onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Coll

isc Silicon PNP Power Transistors MMBT6520L DESCRIPTION Collector-Emitter Saturation Voltage- V = -0.3V(Max.)@I = -0.01A CE(sat) C Collector-Emitter Breakdown Voltage- V = -350V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO