MMBT8550LT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RoHS MMBT8550LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 Complement to MMPT8050LT1 1. 1.BASE Collector-current Ic=-500mA 2.EMITTER High Total Power Dissipation Pc=225mW 2.4 3.COLLECTOR 1.3 Unit mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characteristic Collector-Base Voltage

MMBT8550(1.5A) PNP Silicon Epitaxial Planar Transistor For switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. As complementary type the NPN transistor MMBT8050 (1.5A) is recommended. 1.Base 2.Emitter 3.Collector TO-236 Plastic Package O Absolute Maximum Ratings (T = 25 C) a Parameter Symbol Value Unit Collector Bas

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MMBT8550C/D Features For switching and amplifier applications Especially suitable for AF-Driver stages and low power output stages As complementary type of the NPN transistor MMBT8050C/D is recommended Absolute maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 25 V Emitter Base V

MMBT8550-1.5A PNP Transistor Features SOT-23 (TO-236) For Switching and Amplifier Applications. Especially Suitable for AF-Driver Stages and Low Power Output Stages. As Complementary Type of the NPN Transistor MMBT8050-1.5A is Recommended. 1.Base 2.Emitter 3.Collector Marking -C X2 -D Y2 Absolute Maximum Ratings Ratings at 25 ambient temperature unless other

MMBT8550 PNP Transistor Features SOT-23 (TO-236) For Switching and Amplifier Applications. As Complementary Type of the NPN Transistor MMBT8050 is Recommended. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -V 40 V CBO Collector Emitter Voltage