MMBT8550LT1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBT8550LT1  📄📄 

Código: B6

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 15 pF

Ganancia de corriente contínua (hFE): 85

Encapsulados: SOT-23

  📄📄 Copiar 

 Búsqueda de reemplazo de MMBT8550LT1

- Selecciónⓘ de transistores por parámetros

 

MMBT8550LT1 datasheet

 ..1. Size:131K  wej
 mmbt8550lt1.pdf pdf_icon

MMBT8550LT1

RoHS MMBT8550LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 Complement to MMPT8050LT1 1. 1.BASE Collector-current Ic=-500mA 2.EMITTER High Total Power Dissipation Pc=225mW 2.4 3.COLLECTOR 1.3 Unit mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characteristic Collector-Base Voltage

 6.1. Size:814K  semtech
 mmbt8550c mmbt8550d.pdf pdf_icon

MMBT8550LT1

MMBT8550(1.5A) PNP Silicon Epitaxial Planar Transistor For switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. As complementary type the NPN transistor MMBT8050 (1.5A) is recommended. 1.Base 2.Emitter 3.Collector TO-236 Plastic Package O Absolute Maximum Ratings (T = 25 C) a Parameter Symbol Value Unit Collector Bas

 6.2. Size:332K  topdiode
 mmbt8550.pdf pdf_icon

MMBT8550LT1

Tel/Fax +86 (0)769 82827329 Skype topdiode Email info@topdiode.com Website www.topdiode.com Tel/Fax +86 (0)769 82827329 Skype topdiode Email info@topdiode.com Website www.topdiode.com

 6.3. Size:449K  agertech
 mmbt8550c mmbt8550d.pdf pdf_icon

MMBT8550LT1

MMBT8550C/D Features For switching and amplifier applications Especially suitable for AF-Driver stages and low power output stages As complementary type of the NPN transistor MMBT8050C/D is recommended Absolute maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 25 V Emitter Base V

MOSTRAR MÁS

Otros transistores... MMBT6520LT1G, MMBT6521LT1G, MMBT720, MMBT8050, MMBT8050D, MMBT8050LT1, MMBT8099LT1G, MMBT8550, TIP122, MMBT9012LT1, MMBT9013LT1, MMBT9014LT1, MMBT9015LT1, MMBT9018LT1, MMBT918LT1G, MMBT945-H, MMBT945-L